Compact P Channel MOSFET A Power microelectronics AP20P03D with Excellent Electrical Characteristics
Key Attributes
Model Number:
AP20P03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
RDS(on):
42mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
585pF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
6.1nC@4.5V
Mfr. Part #:
AP20P03D
Package:
TO-252-3
Product Description
Product Overview
The AP20P03D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is specifically designed for battery protection and other switching applications. Its key features include a VDS of -30V, an ID of -20A, and an RDS(ON) of less than 42m at VGS=10V. Applications include battery protection, load switching, and uninterruptible power supplies.
Product Attributes
- Brand: APM Microelectronics (Taiwan Yongyuan Microelectronics Technology Co., Ltd.)
- Product ID: AP20P03D
- Technology: Advanced Trench Technology
- Package: TO-252-3L
- Mode: P-Channel Enhancement Mode
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS | -30 | V | |||
| ID | -20 | A | |||
| RDS(ON) | VGS=10V | 42 | m | ||
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||
| VDS | -30 | V | |||
| VGS | 20 | V | |||
| ID@TC=25 | VGS @ -10V | -20 | A | ||
| ID@TC=100 | VGS @ -10V | -13 | A | ||
| ID@TA=25 | VGS @ -10V | -5.8 | A | ||
| ID@TA=70 | VGS @ -10V | -4.6 | A | ||
| IDM | Pulsed Drain Current | -40 | A | ||
| EAS | Single Pulse Avalanche Energy | 18 | mJ | ||
| IAS | Avalanche Current | -19 | A | ||
| PD@TC=25 | Total Power Dissipation | 25 | W | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | 5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=-250uA) | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-10V , ID=-10A) | 38 | 42 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-4.5V , ID=-4A) | 65 | 78 | m | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =-250uA) | -1.2 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current (VDS=-24V , VGS=0V , TJ=25) | 1 | uA | ||
| IDSS | Drain-Source Leakage Current (VDS=-24V , VGS=0V , TJ=55) | 5 | uA | ||
| IGSS | Gate-Source Leakage Current (VGS=20V , VDS=0V) | 100 | nA | ||
| gfs | Forward Transconductance (VDS=-5V , ID=-15A) | 12 | S | ||
| Qg | Total Gate Charge (-4.5V) (VDS=-15V , VGS=-4.5V , ID=-15A) | 6.1 | nC | ||
| Td(on) | Turn-On Delay Time (VDD=-15V , VGS=-10V , RG=3.3 , ID=-15A) | 2.6 | ns | ||
| Tr | Rise Time | 8.6 | ns | ||
| Td(off) | Turn-Off Delay Time | 33.6 | ns | ||
| Tf | Fall Time | 6 | ns | ||
| Ciss | Input Capacitance (VDS=-15V , VGS=0V , f=1MHz) | 585 | pF | ||
| Coss | Output Capacitance | 100 | pF | ||
| Crss | Reverse Transfer Capacitance | 85 | pF | ||
| IS | Continuous Source Current (VG=VD=0V) | -20 | A | ||
| ISM | Pulsed Source Current | -40 | A | ||
| VSD | Diode Forward Voltage (VGS=0V , IS=-1A , TJ=25) | -1.2 | V | ||
| trr | Reverse Recovery Time (IF=-15A , dI/dt=100A/s , TJ=25) | 6.1 | nS | ||
| Qrr | Reverse Recovery Charge | 1.4 | nC | ||
Note: Refer to datasheet for detailed conditions and explanations of notes 1-5.
2410121435_A-Power-microelectronics-AP20P03D_C3011437.pdf
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