Surface Mount Dual N Channel MOSFET ALJ 8205A Featuring Low RDS ON and Power Switching Performance
Key Attributes
Model Number:
8205A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
38mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
485pF
Output Capacitance(Coss):
155pF
Gate Charge(Qg):
8.6nC@4.5V
Mfr. Part #:
8205A
Package:
SOT-23-6L
Product Description
Product Overview
The 8205A is a Dual N-Channel Enhancement Mode MOSFET from SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. It features a super high dense cell design for low RDS(ON), making it rugged and reliable. This surface mount device is ESD protected and suitable for various applications requiring efficient power switching. Its dual N-channel configuration offers flexibility in circuit design.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Model: 8205A
- Package: SOT-23-6L
- Technology: Dual N-Channel Enhancement Mode MOSFET
- Origin: Shenzhen, China
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| VDSS | Drain-Source Breakdown Voltage | 20 | V | |||
| ID | Drain Current - Continuous | TA=25C | 5.0 | A | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=10A | 20 | m | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| VDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | V | ||
| ID | Drain Current-Continuous | TA=25C | 5.0 | A | ||
| ID | Drain Current-Continuous | TA=70C | 4.0 | A | ||
| IDM | Drain Current-Pulsed | 20 | A | |||
| PD | Maximum Power Dissipation | TA=25C | 1.25 | W | ||
| PD | Maximum Power Dissipation | TA=70C | 0.8 | W | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 | 150 | C | ||
| R JA | Thermal Resistance, Junction-to-Ambient | TA=25C | 100 | C/W | ||
| R JA | Thermal Resistance, Junction-to-Ambient | TA=70C | 120 | C/W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=16V , VGS=0V | 1.0 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS= 12V , VDS=0V | 10 | uA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS , ID=1mA | 0.5 | 0.9 | 1.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V , ID=2.5A | 27.5 | 33.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.1V , ID=2.5A | 38.0 | m | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.0V , ID=2.5A | 28.5 | m | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.7V , ID=2.5A | 30.0 | m | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V , ID=2.5A | 31.0 | 38.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V , ID=5A | 23.0 | 27.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.0V , ID=5A | 24.0 | 28.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.7V , ID=5A | 25.0 | 30.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.1V , ID=5A | 27.0 | 33.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V , ID=5A | 20.0 | 25.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V , ID=2.5A | 23.0 | 27.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.0V , ID=2.5A | 24.0 | 28.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.7V , ID=2.5A | 25.0 | 30.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.1V , ID=2.5A | 27.0 | 33.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V , ID=2.5A | 20.0 | 25.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V , ID=2.5A | 23.0 | 27.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.0V , ID=2.5A | 24.0 | 28.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.7V , ID=2.5A | 25.0 | 30.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.1V , ID=2.5A | 27.0 | 33.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V , ID=2.5A | 20.0 | 25.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V , ID=2.5A | 23.0 | 27.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.0V , ID=2.5A | 24.0 | 28.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.7V , ID=2.5A | 25.0 | 30.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.1V , ID=2.5A | 27.0 | 33.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V , ID=2.5A | 20.0 | 25.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V , ID=2.5A | 23.0 | 27.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.0V , ID=2.5A | 24.0 | 28.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.7V , ID=2.5A | 25.0 | 30.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.1V , ID=2.5A | 27.0 | 33.0 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=2.5V , ID=2.5A | 20.0 | 25.0 | m | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||||
| VSD | Diode Forward Voltage | VGS=0V, IS=1A | 0.78 | 1.2 | V | |
| DYNAMIC CHARACTERISTICS | ||||||
| CISS | Input Capacitance | VDS=16V, VGS=4.5V, RG=6 ohm | 485 | pF | ||
| COSS | Output Capacitance | VDS=16V, VGS=4.5V, RG=6 ohm | 155 | pF | ||
| CRSS | Reverse Transfer Capacitance | VDS=16V, VGS=4.5V, RG=6 ohm | 135 | pF | ||
| Qg | Total Gate Charge | VDD=16V ID=2.5A VGS=4.5V | 16.5 | nC | ||
| Qgs | Gate-Source Charge | VDD=16V ID=2.5A VGS=4.5V | 36 | nC | ||
| Qgd | Gate-Drain Charge | VDD=16V ID=2.5A VGS=4.5V | 18 | nC | ||
| td(ON) | Turn-On Delay Time | VDD=16V ID=2.5A VGS=4.5V RG=6 ohm | 8.6 | ns | ||
| tr | Rise Time | VDD=16V ID=2.5A VGS=4.5V RG=6 ohm | 1.5 | ns | ||
| td(OFF) | Turn-Off Delay Time | VDD=16V ID=2.5A VGS=4.5V RG=6 ohm | 4.2 | ns | ||
| tf | Fall Time | VDD=16V ID=2.5A VGS=4.5V RG=6 ohm | 1.5 | ns | ||
Soldering Parameters
| Parameter | Min | Max | Unit |
|---|---|---|---|
| Pre Heat Temperature (Ts(min)) | 150 | C | |
| Temperature (Ts(max)) | 200 | C | |
| Time (ts) (min to max) | 60 | 190 | secs |
| Average ramp up rate (Liquidus Temp) to peak | 5 | C/second max | |
| Reflow Temperature (TL) (Liquidus) | 217 | C | |
| Time (tL) | 60 | 150 | seconds |
| Temperature (TP) | 260+0/-5 | C | |
| Time within actual peak Temperature (tp) | 20 | 40 | seconds |
| Ramp-down Rate | 5 | C/second max | |
| Time 25C to peak Temperature | 8 | minutes Max. | |
| Maximum Temperature | 280 | C |
2410121840_ALJ-8205A_C22458966.pdf
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