Surface Mount PNP Transistor amsem BC807-16 with 500mA Collector Current and Green EMC Certification
Key Attributes
Model Number:
BC807-16
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC807-16
Package:
SOT-23
Product Description
Product Overview
The BC807 is a PNP transistor designed for general-purpose amplification. It is capable of 300mW power dissipation and 500mA collector current, featuring a wide operating and storage junction temperature range of -55 to 150. This transistor comes in a surface-mount SOT-23 package and is RoHS compliant and Green EMC.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Origin: China (implied by company name)
- Certifications: RoHS compliant / Green EMC
Technical Specifications
| Parameter | Symbol | Conditions | Min | Max | Unit | BC807-16 | BC807-25 | BC807-40 |
| Collector-Emitter Voltage | VCEO | IC=-10mA, IB=0 | -45 | V | ||||
| Collector-Base Voltage | VCBO | IC=-10A, IE=0 | -50 | V | ||||
| Emitter-Base Voltage | VEBO | IE=-10A, IC=0 | -5.0 | V | ||||
| Collector Current | IC | -500 | mA | |||||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | ||||
| Junction Temperature | Tj | -55 | 150 | |||||
| Storage Temperature | TSTG | -55 | +150 | |||||
| Collector Cutoff Current | ICBO | VCB=-45V, IE=0V | -100 | nA | ||||
| Collector Cutoff Current | ICEO | VCE=-40V, IE=0V | -200 | nA | ||||
| Emitter Cutoff Current | IEBO | VEB=-4V, VBE=0V | -100 | nA | ||||
| DC Current Gain | hFE(1) | IC=-100mA, VCE=-1V | 100 | 250 | 100-250 | |||
| DC Current Gain | hFE(1) | IC=-100mA, VCE=-1V | 400 | 160-400 | ||||
| DC Current Gain | hFE(1) | IC=-100mA, VCE=-1V | 250 | 600 | 250-600 | |||
| DC Current Gain | hFE(2) | IC=-500mA, VCE=-1V | 40 | |||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB=-50mA | 0.7 | V | ||||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-500mA, IB=-50mA | 1.2 | V | ||||
| Current Gain-Bandwidth Product | fT | IC=-10mA, VCE=-5.0V, f=100MHz | 100 | MHz |
2410121532_amsem-BC807-16_C7528925.pdf
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