Durable Ultra Fast Recovery Diode amsem MUR160SB with UL 94 V 0 Flammability Rated Molding Compound
Key Attributes
Model Number:
MUR160SB
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
MUR160SB
Package:
SMB
Product Description
Product Overview
The MUR160SB is an Ultra-Fast Recovery Rectifier Diode (FRED) from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, glass passivated chip junction, low leakage current, and high forward surge capability. It is designed for high frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The device meets MSL level 1 per J-STD-020 with a maximum peak of 260 C.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Product Line: MUR160SB
- Certifications: MSL level 1 (per J-STD-020), UL 94 V-0 flammability rating (Molding compound), RoHS-compliant
- Package: DO-214AA (SMB)
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Polarity: Color band denotes cathode end
Technical Specifications
| Parameter | Symbol | Unit | Conditions | MUR160SB |
| Repetitive Peak Reverse Voltage | VRRM | V | 600 | |
| Average Forward Current | IF(AV) | A | Ta=25 | 1.0 |
| Surge (Non-repetitive) Forward Current | IFSM | A | Ta=25, 60Hz Half-sine wave, 1 cycle | 30 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Peak Forward Voltage | VFM | V | IF=1.0A | 1.3 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | Ta=125 | 300 |
| Reverse Recovery Time | Trr | ns | IF =0.5A, IR =1A, IRR =0.25A | 50 |
| Thermal Resistance (Typical) | RJ-L | /W | Between junction and ambient | 20 |
| Typical Junction Capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 25 |
| Non-repetitive Reverse Avalanche Energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
2410121959_amsem-MUR160SB_C18336927.pdf
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