Rectification Schottky Diode amsem BAS70DW-06 with Low Forward Voltage in SOT363 Micro SMD Package
Key Attributes
Model Number:
BAS70DW-06
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@50V
Non-Repetitive Peak Forward Surge Current:
100mA
Diode Configuration:
2 Pair Common Anode
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70DW-06
Package:
SOT-363
Product Description
Product Overview
The BAS70DW-06 is a Schottky Diode featuring low forward voltage and housed in a SOT363 Micro SMD package. It is RoHS Compliant and Green EMC certified, with a matte tin lead finish. This device is suitable for various applications requiring efficient rectification and low power loss.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Certifications: RoHS Compliant, Green EMC
- Lead Finish: Matte Tin (Sn)
- Package: SOT363 Micro SMD
- Device Marking Code: K76
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Max | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 70 | V | ||
| VR | DC Blocking Voltage | 70 | V | ||
| IF | Average Current | 70 | mA | ||
| IFSM | Peak Forward Surge Current | 100 | mA | ||
| PD | Power Dissipation | 200 | mW | ||
| RJA | Thermal Resistance From Junction To Ambient | 500 | /W | ||
| Tj | Junction Temperature | 125 | |||
| Tstg | Storage Temperature | -55 | +150 | ||
| VBR | Reverse Voltage | IR=10A | 70 | V | |
| IR | Reverse Current | VR=50V | 0.1 | A | |
| VF | Forward Voltage | IF=1mA | 0.41 | V | |
| VF | Forward Voltage | IF=15mA | 1.00 | V | |
| CT | Total Capacitance | VR=0V,f=1.0MHz | 2.0 | pF | |
| trr | Reverse Recovery Time | IF=IR=10mA, IRR =1mA , RL=100 | 5.0 | nS |
2410122041_amsem-BAS70DW-06_C7528901.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
