Low RDS ON Silicon MOSFET N Channel Power Transistor ANHI ASR65R046EFD for Power Supply Applications
Key Attributes
Model Number:
ASR65R046EFD
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
59A
RDS(on):
46mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.73pF@100V
Pd - Power Dissipation:
347W
Input Capacitance(Ciss):
5.309nF@100V
Gate Charge(Qg):
111nC@0to10V
Mfr. Part #:
ASR65R046EFD
Package:
TOLL-8L
Product Description
MOSFET Silicon N-Channel
Product Overview
The ASW65R046EFD, ASQ65R046EFD, and ASR65R046EFD are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 39m typ.) and are easy to control for gate switching. They are ideal for single-ended flyback or two-transistor forward topologies, finding application in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
Technical Specifications
| Part Name | Package Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|
| ASW65R046EFD | ASW65R046EFD | 700 | 46 | 111 | 236 | 50 |
| ASQ65R046EFD | ASQ65R046EFD | 700 | 46 | 111 | 236 | 50 |
| ASR65R046EFD | ASR65R046EFD | 700 | 46 | 111 | 236 | 50 |
| Parameter | Symbol | Values (Min.) | Values (Typ.) | Values (Max.) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 59 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 236 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 414 | mJ | Tc=25,VDD=50V, Iav=9.1A, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 9.1 | A | Tc=25,VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 50 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - | - | 347 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - | - | 15 | V/ns | VDS=0...400V, ISD<=58A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - | - | 0.36 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 46.2 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 650 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3.2 | 3.9 | 4.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 3 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 39 | 46 | m | VGS=10V, ID=29.4A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 3.5 | - | f=1MHz, open drain | |
| Input capacitance | Ciss | - | 5309 | - | pF | VGS=0V, VDS=100V, f=1MHz |
| Output capacitance | Coss | - | 101.8 | - | pF | VGS=0V, VDS=100V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 10.73 | - | pF | VGS=0V, VDS=100, f=1MHz |
| Turn-on delay time | td(on) | - | 14.4 | - | ns | VDD=400V,VGS=13V,ID=44.2A, RG=1.8 |
| Rise time | tr | - | 35.1 | - | ns | VDD=400V,VGS=13V,ID=44.2A, RG=1.8 |
| Turn-off delay time | td(off) | - | 86.2 | - | ns | VDD=400V,VGS=13V,ID=44.2A, RG=1.8 |
| Fall time | tf | - | 6.4 | - | ns | VDD=400V,VGS=13V,ID=44.2A, RG=1.8 |
| Gate to source charge | Qgs | - | 28.0 | - | nC | VDD=480V, ID=44.2A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 48.3 | - | nC | VDD=480V, ID=44.2A, VGS=0 to 10V |
| Gate charge total | Qg | - | 111 | - | nC | VDD=480V, ID=44.2A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - | 6.18 | - | V | VDD=480V, ID=44.2A, VGS=0 to 10V |
| Diode forward voltage | VSD | - | 0.65 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 168.9 | - | ns | VR=400V, IF=44.2A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 1.44 | - | uC | VR=400V, IF=44.2A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 15.67 | - | A | VR=400V, IF=44.2A, diF/dt=100A/s |
Available Packages
- TO247-3L (ASW65R046EFD)
- TO247-4L (ASQ65R046EFD)
- TOLL-8L (ASR65R046EFD)
2410121501_ANHI-ASR65R046EFD_C22470092.pdf
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