Silicon N Channel MOSFET ANHI ASW50R130E Featuring Low Drain Source On Resistance and 500V Breakdown Voltage
Key Attributes
Model Number:
ASW50R130E
Product Custom Attributes
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
30A
RDS(on):
113mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
1.31pF@100V
Number:
1 N-channel
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
1.446nF@100V
Gate Charge(Qg):
32.9nC
Mfr. Part #:
ASW50R130E
Package:
TO-247
Product Description
Product Overview
The ASA50R130E and ASW50R130E are N-Channel Silicon MOSFETs designed for applications in single-ended flyback or two-transistor forward topologies. They are suitable for use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source on-resistance (RDS(ON) = 0.113 typ.), easy gate switching control, and enhancement mode operation with a threshold voltage (Vth) of 2.5 to 3.5 V. These MOSFETs offer high performance with a drain-source breakdown voltage of 500V and a continuous drain current of 30A.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA50R130E | TO220F | ASA50R130E | 550 | 130 | 32.9 | 90 |
| ASW50R130E | TO247-3L | ASW50R130E | 550 | 130 | 32.9 | 90 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 500 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 - 3.5 | V | VDS=VGS, ID=250uA |
| Drain-source on-state resistance | RDS(on) | 0.113 - 0.130 | VGS=10V, ID=10A, Tj=25C | |
| Continuous drain current | ID | - 30 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 90 | A | TC=25C, Pulse width tp limited by Tj,max |
| Power dissipation (TO220F) | Ptot | - 32 | W | TC=25C |
| Power dissipation (TO247) | Ptot | - 160 | W | TC=25C |
| Input capacitance | Ciss | - 1446 | pF | VGS=0V, VDS=100V, f=1MHz |
| Output capacitance | Coss | - 79 | pF | VGS=0V, VDS=100V, f=1MHz |
| Reverse transfer capacitance | Crss | - 1.31 | pF | VGS=0V, VDS=100V, f=1MHz |
| Gate charge total | Qg | - 32.9 | nC | VDD=400V, ID=7.7A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 205 | ns | VR=400V, IF=7.7A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 2.0 | uC | VR=400V, IF=7.7A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 20.3 | A | VR=400V, IF=7.7A, diF/dt=100A/s |
2409291603_ANHI-ASW50R130E_C7494991.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
