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quality High Speed Power MOSFET AUB040N10 Suitable for Hard Switching and Synchronous Rectification Circuits factory
quality High Speed Power MOSFET AUB040N10 Suitable for Hard Switching and Synchronous Rectification Circuits factory

High Speed Power MOSFET AUB040N10 Suitable for Hard Switching and Synchronous Rectification Circuits

Key Attributes
Model Number: AUB040N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
176A
RDS(on):
3.7mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
480pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
229W
Input Capacitance(Ciss):
3.929nF@50V
Gate Charge(Qg):
176.8nC
Mfr. Part #:
AUB040N10
Package:
TO-263
Product Description

Product Overview

The AUB040N10 and AUP042N10 are N-Channel Silicon MOSFETs designed for high-performance applications. They are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters within the telecommunications and industrial sectors. Key features include low drain-source on-resistance, high-speed power switching capabilities, an enhanced body diode with dv/dt capability, and improved avalanche ruggedness.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon N-Channel MOS
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Model Value Unit Note / Test Condition
Low drain-source on-resistance TO263 3.7 m RDS(on) = 3.7m (typ.)
TO220 3.9 m RDS(on) = 3.9m (typ.)
Drain-source breakdown voltage AUB040N10, AUP042N10 100 V VGS=0V, ID=250uA
Gate threshold voltage 2.5 - 4.5 V VDS=VGS, ID=250uA
Continuous drain current AUB040N10, AUP042N10 176 A At Tj=25C, silicon (Limited by Tj,max)
Continuous drain current AUB040N10, AUP042N10 123 A At Tj=25C, package
Continuous drain current AUB040N10, AUP042N10 112 A At Tj=100C, silicon
Pulsed drain current AUB040N10, AUP042N10 486 A TC=25C (Pulse width tp limited by Tj,max)
Avalanche energy, single pulse AUB040N10, AUP042N10 441 mJ Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25
Gate source voltage (static) AUB040N10, AUP042N10 -20 - 20 V static
Power dissipation AUB040N10, AUP042N10 229 W TC=25C
Storage temperature AUB040N10, AUP042N10 -55 - 150 C
Operating junction temperature AUB040N10, AUP042N10 -55 - 150 C
Soldering Temperature AUB040N10, AUP042N10 260 C Distance of 1.6mm from case for 10s
Thermal resistance, junction - case TO263 & TO220 0.54 C/W
Thermal resistance, junction - ambient TO263 & TO220 62 C/W device on PCB, minimal footprint
Drain-source on-state resistance (TO263) AUB040N10, AUP042N10 3.7 - 4.0 m VGS=10V, ID=20A, Tj=25C
Drain-source on-state resistance (TO220) AUB040N10, AUP042N10 3.9 - 4.2 m VGS=10V, ID=20A, Tj=25C
Input capacitance AUB040N10, AUP042N10 3929 PF VGS=0V, VDS=50V, f=1MHz
Output capacitance AUB040N10, AUP042N10 483 PF VGS=0V, VDS=50V, f=1MHz
Reverse transfer capacitance AUB040N10, AUP042N10 480 PF VGS=0V, VDS=50V, f=1MHz
Gate to source charge AUB040N10, AUP042N10 21.7 nC VDD=50V, ID=20A, VGS=10V
Gate to drain charge AUB040N10, AUP042N10 106.3 nC VDD=50V, ID=20A, VGS=10V
Gate charge total AUB040N10, AUP042N10 176.8 nC VDD=50V, ID=20A, VGS=10V
Diode forward voltage AUB040N10, AUP042N10 1.2 V VGS=0V, Is=1A, Tj=25C
Reverse recovery time AUB040N10, AUP042N10 57 ns Vgs=0V, IF=50A, diF/dt=100A/s
Reverse recovery charge AUB040N10, AUP042N10 111 nC Vgs=0V, IF=50A, diF/dt=100A/s
Peak Reverse Recovery Current AUB040N10, AUP042N10 3.24 A Vgs=0V, IF=50A, diF/dt=100A/s
Package AUB040N10 TO263
Package AUP042N10 TO220

2410121610_ANHI-AUB040N10_C7494997.pdf

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