Power MOSFET ASA60R090EFDA designed for application servers and solar inverter power supply circuits
Key Attributes
Model Number:
ASA60R090EFDA
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
47A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.7pF
Number:
1 N-channel
Output Capacitance(Coss):
298.1pF
Input Capacitance(Ciss):
3.291nF
Pd - Power Dissipation:
191W
Gate Charge(Qg):
65.32nC@10V
Mfr. Part #:
ASA60R090EFDA
Package:
TO-220F
Product Description
Product Overview
The ASA60R090EFDA and ASW60R090EFDA are N-Channel Silicon MOSFETs designed for soft switching applications. They are ideal for use as Boost PFC switches and in Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. These MOSFETs are well-suited for power supplies in Application Servers, Telecom, EV Charging, and Solar Inverters, offering low drain-source on-resistance (RDS(ON) = 0.080 typ.) and easy gate control with enhancement mode operation (Vth = 3 to 5V).
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Package | Marking |
|---|---|---|
| ASA60R090EFDA | TO220F | ASA60R090EFDA |
| ASW60R090EFDA | TO247-3L | ASW60R090EFDA |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.080 - 0.090 | VGS=10V, ID=20A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 0.9 - | f=1MHz, open drain | |
| Continuous drain current | ID | - 47 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 141 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 885 | mJ | Tc=25, VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 59 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 191 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Diode forward voltage | VSD | - 0.66 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 147.8 | ns | Vr=400v,IF=9.6A,di/dt=100A/us |
| Reverse recovery charge | Qrr | - 0.96 | uC | Vr=400v,IF=9.6A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | - 12.27 | A | Vr=400v,IF=9.6A,di/dt=100A/us |
| Input capacitance | Ciss | - 3291 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 298.1 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 10.7 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.1 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Rise time | tr | - 4.4 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Turn-off delay time | td(off) | - 39.1 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Fall time | tf | - 4.3 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Gate to source charge | Qgs | - 18.16 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 22.93 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate charge total | Qg | - 65.32 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.98 | V | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Thermal resistance, junction - case (TO220F) | RthJC | - 3.65 | C/W | |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO247) | RthJC | - 0.65 | C/W | |
| Thermal resistance, junction - ambient (TO247) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
2411220408_ANHI-ASA60R090EFDA_C18722996.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
