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quality N Channel Silicon MOSFET AUB056N10 Designed for Telecommunications Power Switching and Rectification factory
quality N Channel Silicon MOSFET AUB056N10 Designed for Telecommunications Power Switching and Rectification factory

N Channel Silicon MOSFET AUB056N10 Designed for Telecommunications Power Switching and Rectification

Key Attributes
Model Number: AUB056N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
136A
RDS(on):
5.3mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
15.3pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
161W
Input Capacitance(Ciss):
3.864nF@50V
Gate Charge(Qg):
63.7nC
Mfr. Part #:
AUB056N10
Package:
TO-263
Product Description

Product Overview

The AUN053N10, AUB056N10, and AUP056N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include low drain-source on-resistance (RDS(ON)) across various packages (DFN5X6, TO263, TO220), high-speed power switching capability, enhanced body diode dv/dt capability, and improved avalanche ruggedness.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon N-Channel MOS
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Model Package Marking VDS @ Tj,max (V) RDS(on),max DFN5X6 (m) RDS(on),max TO263 (m) RDS(on),max TO220 (m) Qg,typ (nC) ID,pulse (A)
AUN053N10 DFN5x6 AUN053N10 100 5.3 - - 60.7 399
AUB056N10 TO263 AUB056N10 100 - 5.6 - 60.7 399
AUP056N10 TO220 AUP056N10 100 - - 5.6 60.7 399
Parameter Symbol Value Unit Condition
Continuous drain current ID 136 A TC=25C, Limited by Tj,max, D = 0.50
Continuous drain current ID 101 A TC=100C, Limited by Tj,max, D = 0.50
Pulsed drain current ID,pulse 399 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 282 mJ Tc=25,VDD=50V,Id=33.6A, L=0.5mH, RG=25
Avalanche current, single pulse IAR 33.6 A Tc=25, VDD=50V, L=0.5mH, RG=25
Gate source voltage (static) VGS -20 to 20 V static
Power dissipation (DFN5x6) Ptot 151 W TC=25C
Power dissipation (TO263,TO220) Ptot 161 W TC=25C
Storage temperature Tstg -55 to 150 C
Operating junction temperature Tj -55 to 150 C
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Thermal resistance, junction - case (TO263&TO220) RthJC 0.78 C/W
Thermal resistance, junction - ambient (TO263&TO220) RthJA 62 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (DFN5X6) RthJC 0.85 C/W
Thermal resistance, junction - ambient (DFN5X6) RthJA 50 C/W device on PCB, minimal footprint
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.5 to 4.5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS 1 uA VDS=95V, VGS=0V, Tj=25C
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance (DFN5X6) RDS(on) 4.6 to 5.3 m VGS=10V, ID=20A, Tj=25C
Drain-source on-state resistance (TO263,TO220) RDS(on) 4.8 to 5.6 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG 1.5 f=1MHz, open drain
Transconductance GFS 53 S VDS=5V IDS=20A
Input capacitance Ciss 3864 pF VGS=0V, VDS=50V, f=1MHz
Output capacitance Coss 379 pF VGS=0V, VDS=50V, f=1MHz
Reverse transfer capacitance Crss 15.3 pF VGS=0V, VDS=50V, f=1MHz
Turn-on delay time td(on) 30.5 ns VDD=50V,VGS=10V,ID=20A, RG=10
Rise time tr 57 ns VDD=50V,VGS=10V,ID=20A, RG=10
Turn-off delay time td(off) 72 ns VDD=50V,VGS=10V,ID=20A, RG=10
Fall time tf 45 ns VDD=50V,VGS=10V,ID=20A, RG=10
Gate to source charge Qgs 16.2 nC VDD=50V, ID=20A, VGS=0 to 10V
Gate to drain charge Qgd 18.5 nC VDD=50V, ID=20A, VGS=0 to 10V
Gate charge total Qg 63.7 nC VDD=50V, ID=20A, VGS=0 to 10V
Diode forward voltage VSD 0.7 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 47 ns VR=30V, IF=20A, diF/dt=300A/s
Reverse recovery charge Qrr 221 nC VR=30V, IF=20A, diF/dt=300A/s
Peak reverse recovery current Irrm 8.8 A VR=30V, IF=20A, diF/dt=300A/s

2410121516_ANHI-AUB056N10_C5440033.pdf

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