Enhancement mode N Channel MOSFET AUP039N10 with 3.9 milliohm RDSon and 65nC typical gate charge rating
Key Attributes
Model Number:
AUP039N10
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
83pF
Number:
1 N-channel
Output Capacitance(Coss):
865pF
Pd - Power Dissipation:
151W
Input Capacitance(Ciss):
3.562nF
Gate Charge(Qg):
60.7nC@10V
Mfr. Part #:
AUP039N10
Package:
TO-220
Product Description
Product Overview
The AUN036N10, AUP039N10, AUA039N10, and AUB039N10 are N-Channel Silicon MOSFETs designed for efficient power management applications. These enhancement-mode devices feature low drain-source on-resistance and are easy to control, making them ideal for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting solutions.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max DFN5X6 (m) | RDS(on),max TO220 (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|
| AUN036N10 | DFN5X6 | AUN036N10 | 100 | 3.6 | - | 65 | 437 |
| AUP039N10 | TO220 | AUP039N10 | 100 | - | 3.9 | 65 | 437 |
| AUA039N10 | TO220F | AUA039N10 | 100 | - | 3.9 | 65 | 437 |
| AUB039N10 | TO263 | AUB039N10 | 100 | - | 3.9 | 65 | 437 |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | - 125 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - - 437 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - - 306 | mJ | Tc=25, VDD=50V, I=35A, L=0.1mH, RG=25 |
| Avalanche current, single pulse | IAR | - - 35 | A | Tc=25, VDD=50V, L=0.1mH, RG=25 |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation (TO220&263) | Ptot | - - 151 | W | TC=25C |
| Power dissipation (TO220F) | Ptot | - - 30 | W | TC=25C |
| Power dissipation (DFN5X6) | Ptot | - - 75 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Soldering Temperature | TL | - - 260 | C | Distance of 1.6mm from case for 10s |
| Drain-source breakdown voltage | V(BR)DSS | 100 - - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1.2 1.8 2.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - - 1 | uA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (DFN5x6) | RDS(on) | - 3.3 3.6 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO220&220F&263) | RDS(on) | - 3.6 3.9 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - 0.6 - | f=1MHz, open drain | |
| Input capacitance | Ciss | - 3562 - | PF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | - 865 - | PF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | - 83 - | PF | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | - 29 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Rise time | tr | - 55 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Turn-off delay time | td(off) | - 69 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Fall time | tf | - 43 - | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Gate to source charge | Qgs | - 15.5 - | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 17.6 - | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | - 60.7 - | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.7 - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 45 - | ns | VR=30V, IF=20A, diF/dt=300A/s |
| Reverse recovery charge | Qrr | - 212 - | nC | VR=30V, IF=20A, diF/dt=300A/s |
| Peak reverse recovery current | Irrm | - 8.4 - | A | VR=30V, IF=20A, diF/dt=300A/s |
| Thermal resistance, junction - case (TO220F) | RthJC | - - 4.2 | C/W | |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - - 60 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO263&TO220) | RthJC | - - 0.83 | C/W | |
| Thermal resistance, junction - ambient (TO263&TO220) | RthJA | - - 62 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (DFN5x6) | RthJC | - - 1.7 | C/W | |
| Thermal resistance, junction - ambient (DFN5x6) | RthJA | - - 50 | C/W | device on PCB, minimal footprint |
Diagrams
- Diagram 1: Typ. Output characteristics
- Diagram 2: Typ. Transfer characteristics
- Diagram 3: Typ. Rdson vs. Drain Current
- Diagram 4: Typ. Rdson Junction Temperature
- Diagram 5: Typ. Body-Diode Characteristics
- Diagram 6: Typ. Capacitance vs. Vds
- Diagram 7: Typ. Power Dissipation
- Diagram 8: Typ. Drain Current De-rating
- Diagram 9: Typ. Gate charge
- Diagram 10: Typ. Maximum Safe Operating Area
Package Outlines
- Figure 1: Outline PGDFN5X6(HC)
- Figure 2: Outline PGTO220(HT)
- Figure 3: Outline PGTO220F(HT)
- Figure 4: Outline PGTO263(HC&LM)
Revision History
- 1.0 (2022-08-03): Preliminary version
- 1.1 (2022-09-14): Updated Vth limit
- 1.2 (2022-11-16): Added package TO220
- 1.3 (2023-02-06): Updated diagram2 transfer characteristics
- 1.4 (2023-06-06): Added TO220F&263 package
2410121452_ANHI-AUP039N10_C18722994.pdf
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