ASW65R038EFD Silicon N Channel MOSFET Featuring Low RDS ON for Telecom Power and EV Charging Systems
Key Attributes
Model Number:
ASW65R038EFD
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.1pF
Number:
1 N-channel
Output Capacitance(Coss):
169pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
6.033nF
Gate Charge(Qg):
158.2nC@10V
Mfr. Part #:
ASW65R038EFD
Package:
TO-247
Product Description
ASW65R038EFD MOSFET Silicon N-Channel MOS
Product Overview
The ASW65R038EFD is a Silicon N-Channel MOSFET designed for soft switching applications. It is suitable for Boost PFC switch, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC applications. Key application areas include Server Power, Telecom Power, EV Charging, and Solar Inverters. This enhancement mode MOSFET features a low drain-source on-resistance (RDS(ON)) of 0.034 (typ.) and is easy to control with a gate switching threshold voltage (Vth) of 3 to 5 V.Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Package: TO247
- Marking: ASW65R038EFD
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | VDS @ Tj,max | 700 | V | Tj,max |
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=250uA |
| Maximum RDS(on) | RDS(on),max | 38 | m | - |
| Drain-source on-state resistance | RDS(on) | 0.034 - 0.038 | VGS=10V, ID=28A, Tj=25C | |
| Typical Gate charge total | Qg,typ | 158.2 | nC | - |
| Gate charge total | Qg | 158.2 | nC | VDD =480V, ID =44.2A, VGS =10V |
| Pulsed drain current | ID,pulse | 240 | A | TC=25C, tp limited by Tj,max |
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Continuous drain current | ID | 80 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Avalanche energy, single pulse | EAS | 2560 | mJ | Tc=25,VDD=50V,L=20mH, RG=25 |
| Avalanche current, single pulse | IAR | 16 | A | Tc=25,VDD=50V,L=20mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | 26 | V/ns | VDS=0...150V |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 to 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | 500 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | - |
| Operating junction temperature | Tj | -55 to 150 | C | - |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Thermal resistance, junction - case | RthJC | 0.205 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Gate threshold voltage | V(GS)th | 3 to 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 5 | uA | VDS=650V, VGS=0, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Gate resistance (Intrinsic) | RG | 1.2 | f=1MHz, open drain | |
| Input capacitance | Ciss | 6033 | pF | VGS=0V, VDS=400V, f=1MHz |
| Output capacitance | Coss | 169 | pF | VGS=0V, VDS=400V, f=1MHz |
| Reverse transfer capacitance | Crss | 12.1 | pF | VGS=0V, VDS=400V, f=1MHz |
| Turn-on delay time | td(on) | 67.6 | ns | VDD=400V,VGS=13V,ID=44.2A RG=1.8 |
| Rise time | tr | 29.8 | ns | VDD=400V,VGS=13V,ID=44.2A RG=1.8 |
| Turn-off delay time | td(off) | 30 | ns | VDD=400V,VGS=13V,ID=44.2A RG=1.8 |
| Fall time | tf | 325.4 | ns | VDD=400V,VGS=13V,ID=44.2A RG=1.8 |
| Gate to source charge | Qgs | 45 | nC | VDD =480V, ID =44.2A, VGS =10V |
| Gate to drain charge | Qgd | 61 | nC | VDD =480V, ID =44.2A, VGS =10V |
| Gate plateau voltage | Vplateau | 6.14 | V | VDD =480V, ID =44.2A, VGS =10V |
| Diode forward voltage | VSD | 0.61 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 173.5 | ns | Vr=400v,IF=44.2A,di/dt=100A/us |
| Reverse recovery charge | Qrr | 1.19 | uC | Vr=400v,IF=44.2A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | 12.7 | A | Vr=400v,IF=44.2A,di/dt=100A/us |
2410121615_ANHI-ASW65R038EFD_C19192888.pdf
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