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quality N Channel Silicon MOSFET ASA60R150E ideal for power supplies adapters and LED lighting applications factory
quality N Channel Silicon MOSFET ASA60R150E ideal for power supplies adapters and LED lighting applications factory

N Channel Silicon MOSFET ASA60R150E ideal for power supplies adapters and LED lighting applications

Key Attributes
Model Number: ASA60R150E
Product Custom Attributes
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
28A
RDS(on):
120mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.07pF
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
2.389nF
Gate Charge(Qg):
47.59nC
Mfr. Part #:
ASA60R150E
Package:
TO-220F
Product Description

Product Overview

The ASA60R150E and ASW60R150E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. Featuring low drain-source on-resistance (RDS(on)) and easy gate control, these enhancement-mode devices are ideal for use as Boost PFC switches, single-ended flyback converters, and in half-bridge or asymmetric half-bridge topologies. They are well-suited for a wide range of applications including PC power supplies, adapters, LCD & PDP TVs, telecom power systems, UPS, and LED lighting.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Model Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
ASA60R150E TO220F ASA60R150E 650 150 47.59 84
ASW60R150E TO247 ASW60R150E 650 150 47.59 84
Parameter Symbol Values (Unit) Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 605 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.8 - 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - - 100 nA VDS=600V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) - 0.12 - 0.15 VGS=10V, ID=10A, Tj=25C
Gate resistance (Intrinsic) RG - 5.8 - f=1MHz, open drain
Input capacitance Ciss - 2389 - pF VGS=0V, VDS=50V, f=10kHz
Output capacitance Coss - 218 - pF VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance Crss - 5.07 - pF VGS=0V, VDS=50V, f=10kHz
Turn-on delay time td(on) - 12.4 - ns VDD=400V,VGS=13V,ID=11.3A, RG=1.7
Rise time tr - 21.6 - ns VDD=400V,VGS=13V,ID=11.3A, RG=1.7
Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=11.3A, RG=1.7
Fall time tf - 18.4 - ns VDD=400V,VGS=13V,ID=11.3A, RG=1.7
Gate to source charge Qgs - 8.522 - nC VDD=400V, ID=11.3A, VGS=0 to 10V
Gate to drain charge Qgd - 8.297 - nC VDD=400V, ID=11.3A, VGS=0 to 10V
Gate charge total Qg - 47.59 - nC VDD=400V, ID=11.3A, VGS=0 to 10V
Gate plateau voltage Vplateau - 5.4 - V VDD=400V, ID=11.3A, VGS=0 to 10V
Diode forward voltage VSD - 0.7 - V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr - 288 - ns VR=400V, IF=11.3 A,diF/dt=100A/s
Reverse recovery charge Qrr - 4.3 - uC VR=400V, IF=11.3 A,diF/dt=100A/s
Peak reverse recovery current Irrm - 26.2 - A VR=400V, IF=11.3 A,diF/dt=100A/s
Parameter Symbol Values (Unit) Note / Test Condition
Thermal resistance, junction - case (TO220F) RthJC - - 3.65 C/W -
Thermal resistance, junction - ambient (TO220F) RthJA - - 80 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (TO247) RthJC - - 0.64 C/W -
Thermal resistance, junction - ambient (TO247) RthJA - - 62 C/W device on PCB, minimal footprint
Parameter Symbol Values (Unit) Note / Test Condition
Continuous drain current ID - 28 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse - - 84 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - - 898 mJ -
MOSFET dv/dt ruggedness dv/dt - - 130 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (TO220F) Ptot - - 34 W TC=25C
Power dissipation (TO247) Ptot - - 195 W TC=25C
Storage temperature Tstg -55 - 150 C -
Operating junction temperature Tj -55 - 150 C -
Reverse diode dv/dt dv/dt - - 15 V/ns VDS=0...400V, ISD<=48A, Tj=25C

2410121550_ANHI-ASA60R150E_C7494994.pdf

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