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quality Silicon N Channel MOSFET AUD069N10A Optimized for Switch Mode Power Supplies and DC DC Converters factory
quality Silicon N Channel MOSFET AUD069N10A Optimized for Switch Mode Power Supplies and DC DC Converters factory

Silicon N Channel MOSFET AUD069N10A Optimized for Switch Mode Power Supplies and DC DC Converters

Key Attributes
Model Number: AUD069N10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
116A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
375pF
Pd - Power Dissipation:
161W
Input Capacitance(Ciss):
3.861nF
Gate Charge(Qg):
63.5nC@10V
Mfr. Part #:
AUD069N10A
Package:
TO-252
Product Description

Product Overview

The AUD069N10A is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features low drain-source on-resistance, enhanced body diode dv/dt capability, and improved avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Channel Type: N-Channel

Technical Specifications

Model Package Marking VDS @ Tj,max (V) RDS(on),max (m) TO220&TO220F RDS(on),max (m) TO263&TO252 Qg,typ (nC) ID,pulse (A)
AUP065N10A TO220 AUP065N10A 100 6.5 - 60.7 464
AUA065N10A TO220F AUA065N10A 100 6.5 - 60.7 464
AUB069N10A TO263 AUB069N10A 100 - 6.9 60.7 464
AUD069N10A TO252 AUD069N10A 100 - 6.9 60.7 464
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID 116 A TC=25C, limited by Tj,max, D = 0.50
Continuous drain current ID 91 A TC=100C, limited by Tj,max, D = 0.50
Pulsed drain current ID,pulse 464 A TC=25C, pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 186 mJ Tc=25, VDD=50V, Id=27.3A, L=0.5mH, RG=25
Avalanche current, single pulse IAR 27.3 A Tc=25, VDD=50V, L=0.5mH, RG=25
Gate source voltage (static) VGS -20 to 20 V static
Power dissipation (TO263&TO252&TO220) Ptot 161 W TC=25C
Power dissipation (TO220F) Ptot 30 W TC=25C
Storage temperature Tstg -55 to 150 C
Operating junction temperature Tj -55 to 150 C
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Thermal resistance, junction - case (TO220F) RthJC 5 C/W -
Thermal resistance, junction - ambient (TO220F) RthJA 60 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (TO220&TO263&TO252) RthJC 1 C/W -
Thermal resistance, junction - ambient (TO220&TO263&TO252) RthJA 62 C/W device on PCB, minimal footprint
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 3.4 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS 1 uA VDS=95V, VGS=0V, Tj=25C
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance (TO220&TO220F) RDS(on) 6.5 m VGS=10V, ID=20A, Tj=25C
Drain-source on-state resistance (TO263) RDS(on) 6.9 m VGS=10V, ID=20A, Tj=25C
Drain-source on-state resistance (TO252) RDS(on) 6.9 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG 1.5 f=1MHz, open drain
Transconductance GFS 52 S VDS=5V IDS=20A
Input capacitance Ciss 3861 pF VGS=0V, VDS=50V, f=1MHz
Output capacitance Coss 375 pF VGS=0V, VDS=50V, f=1MHz
Reverse transfer capacitance Crss 15.1 pF VGS=0V, VDS=50V, f=1MHz
Turn-on delay time td(on) 30 ns VDD=50V,VGS=10V,ID=20A, RG=10
Rise time tr 56 ns VDD=50V,VGS=10V,ID=20A, RG=10
Turn-off delay time td(off) 71 ns VDD=50V,VGS=10V,ID=20A, RG=10
Fall time tf 44 ns VDD=50V,VGS=10V,ID=20A, RG=10
Gate to source charge Qgs 16.1 nC VDD=50V, ID=20A, VGS=0 to 10V
Gate to drain charge Qgd 18.3 nC VDD=50V, ID=20A, VGS=0 to 10V
Gate charge total Qg 63.5 nC VDD=50V, ID=20A, VGS=0 to 10V
Diode forward voltage VSD 0.7 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 46 ns VR=30V, IF=20A, diF/dt=300A/s
Reverse recovery charge Qrr 220 nC VR=30V, IF=20A, diF/dt=300A/s
Peak reverse recovery current Irrm 8.6 A VR=30V, IF=20A, diF/dt=300A/s

2410121530_ANHI-AUD069N10A_C19192890.pdf

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