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quality N Channel Power MOSFET ANHI AUP062N08BG with Low Drain Source On Resistance and High Switching Speed factory
quality N Channel Power MOSFET ANHI AUP062N08BG with Low Drain Source On Resistance and High Switching Speed factory

N Channel Power MOSFET ANHI AUP062N08BG with Low Drain Source On Resistance and High Switching Speed

Key Attributes
Model Number: AUP062N08BG
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.2mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
24.24pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
3.73nF
Gate Charge(Qg):
55.7nC
Mfr. Part #:
AUP062N08BG
Package:
TO-220
Product Description

AUA/AUB/AUP/AUN/AUD062N08 - N-Channel Power MOSFET

The AUA/AUB/AUP/AUN/AUD062N08 series are N-Channel Power MOSFETs designed for synchronous rectification and hard switching applications. These devices are suitable for high-speed circuits, telecom applications, and industrial SMPS. Key features include low drain-source on-resistance, high switching speed, enhanced body diode, and ruggedness against dv/dt.

Product Attributes

  • Brand: AU (implied by part numbering and package codes)
  • Channel Type: N-Channel
  • Technology: MOSFET

Technical Specifications

Model Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
AUA062N08 TO220F N08BG 85 6.2 55.7 240
AUB062N08 TO263 N08BG 85 6.2 55.7 240
AUP062N08 DFN5x6 N08BG 85 6.2 55.7 240
AUN062N08 TO252 N08BG 85 6.2 55.7 240
AUD062N08 TO220 N08BG 85 6.2 55.7 240
AUA062N08BG TO220F 8BG 85 6.2 55.7 240
AUB062N08BG TO263 8BG 85 6.2 55.7 240
AUP062N08BG DFN5x6 8BG 85 6.2 55.7 240
AUN062N08BG TO252 8BG 85 6.2 55.7 240
AUD062N08BG TO220 8BG 85 6.2 55.7 240
Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 85 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.5 - 3.5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1000 nA VDS=80V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance RDS(on) 5.6 - 6.2 m VGS=10V, ID=20A, Tj=25C
Input capacitance Ciss - 3730 pF Vds=40V,Vgs=0V f=1MHz
Output capacitance Coss - 674 pF Vds=40V,Vgs=0V f=1MHz
Reverse transfer capacitance Crss - 24.24 pF Vds=40V,Vgs=0V f=1MHz
Turn-on delay time td(on) - 16.5 ns VDD=40V,VGS=10V,RG=10 ID=20A
Rise time tr - 13.7 ns VDD=40V,VGS=10V,RG=10 ID=20A
Turn-off delay time td(off) - 35.9 ns VDD=40V,VGS=10V,RG=10 ID=20A
Fall time tf - 13.45 ns VDD=40V,VGS=10V,RG=10 ID=20A
Gate to source charge Qgs - 15.9 nC VDS=40V,VGS=0 to 10V ID=20A
Gate to drain charge Qgd - 13.3 nC VDS=40V,VGS=0 to 10V ID=20A
Gate charge total Qg - 55.7 nC VDS=40V,VGS=0 to 10V ID=20A
Diode forward voltage VSD - 0.7 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr - 40.9 ns VR=40V,IF=20A, diF/dt=200A/us
Reverse recovery charge Qrr - 106.8 uC VR=40V,IF=20A,diF/dt=200A/us
Peak reverse recovery current Irrm -3.7 A VR=40V,IF=20A,diF/dt=200A/us

Package Outlines

Refer to the following figures for package outlines:

  • Figure 1: Outline PG-TO220F
  • Figure 2: Outline PG-TO263
  • Figure 3: Outline PG-TO220
  • Figure 4: Outline PG-TO252
  • Figure 5: Outline PG-DFN5x6

2410121609_ANHI-AUP062N08BG_C5440022.pdf

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