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quality 1200V 20A Alpha IGBT AOS AOK20B120E1 with integrated diode offering fast turn off time and high surge current capability factory
quality 1200V 20A Alpha IGBT AOS AOK20B120E1 with integrated diode offering fast turn off time and high surge current capability factory

1200V 20A Alpha IGBT AOS AOK20B120E1 with integrated diode offering fast turn off time and high surge current capability

Key Attributes
Model Number: AOK20B120E1
Product Custom Attributes
Td(off):
134ns
Pd - Power Dissipation:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
60.5nC
Operating Temperature:
-55℃~+175℃@(Tj)
Turn-On Energy (Eon):
-
Mfr. Part #:
AOK20B120E1
Package:
TO-247
Product Description

Product Overview

The AOK20B120E1 is a 1200V, 20A Alpha IGBT with an integrated diode, featuring the latest AlphaIGBT ( IGBT) technology. It offers best-in-class VCE(SAT) for high efficiencies, low turn-off switching loss due to fast turn-off time, and very smooth turn-off current waveforms that reduce EMI. This IGBT provides better thermal management, high surge current capability, and minimal gate spike due to high input capacitance. It is designed for applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications. This product has been designed and qualified for the consumer market.

Product Attributes

  • Brand: AOS (Alpha & Omega Semiconductor)
  • Technology: Alpha IGBT ( IGBT)
  • Package Type: TO247

Technical Specifications

Parameter Conditions Min Typ Max Units
Collector-Emitter Voltage 1200 V
Continuous Collector Current TC=25C 80 A
Continuous Collector Current TC=100C 40 A
Continuous Diode Forward Current TC=25C 40 A
Continuous Diode Forward Current TC=100C 20 A
Pulsed Collector Current Limited by TJmax 200 A
Diode Pulsed Current Limited by TJmax 80 A
Gate-Emitter Voltage -30 +30 V
Collector-Emitter Breakdown Voltage TJ=25C 1200 V
Collector-Emitter Saturation Voltage VGE=15V, IC=20A, TJ=25C 1.68 2.1 V
Collector-Emitter Saturation Voltage VGE=15V, IC=20A, TJ=125C 2 V
Collector-Emitter Saturation Voltage VGE=15V, IC=20A, TJ=175C 2.2 V
Gate-Emitter Threshold Voltage VCE=20V, IC=1mA, TJ=25C 4.5 5.15 5.8 V
Zero Gate Voltage Collector Current VCE=1200V, VGE=0V, TJ=25C 10 A
Zero Gate Voltage Collector Current VCE=1200V, VGE=0V, TJ=125C 500 A
Zero Gate Voltage Collector Current VCE=1200V, VGE=0V, TJ=175C 5000 A
Diode Forward Voltage IF=20A, TJ=25C 1.6 2 V
Diode Forward Voltage IF=20A, TJ=125C 1.68 V
Diode Forward Voltage IF=20A, TJ=175C 1.7 V
Maximum Power Dissipation TC=25C 333 W
Maximum IGBT Junction-to-Case Thermal Resistance 0.45 C/W
Maximum Diode Junction-to-Case Thermal Resistance 1.6 C/W
Maximum Junction-to-Ambient Thermal Resistance 40 C/W
Junction and Storage Temperature Range -55 175 C
Orderable Part Number AOK20B120E1
Minimum Order Quantity 240

2504101957_AOS-AOK20B120E1_C17294572.pdf

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