switching solution featuring A Power microelectronics AP3P10MI P Channel MOSFET with 100V VDS and 3A current
Key Attributes
Model Number:
AP3P10MI
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
RDS(on):
350mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 P-Channel
Output Capacitance(Coss):
56pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
AP3P10MI
Package:
SOT-23-3L
Product Description
Product Overview
The AP3P10MI is a P-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 5V. This MOSFET is designed for applications such as battery protection and general switching tasks. It features a VDS of -100V and a continuous drain current of -3A.
Product Attributes
- Brand: APM Microelectronics
- Product ID: AP3P10MI
- Technology: Advanced Trench Technology
- Channel Type: P-Channel Enhancement Mode
- Package: SOT-23-3L
- Origin: (Taiwan Yongyuan Microelectronics Technology Co., Ltd.)
Technical Specifications
| Parameter | Rating/Value | Unit | |
|---|---|---|---|
| General Features | |||
| VDS (Drain-Source Voltage) | -100 | V | |
| ID (Continuous Drain Current) | -3 | A | |
| RDS(ON) (Static Drain-Source On-Resistance) | < 350 | m | |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||
| VDS (Drain-Source Voltage) | -100 | V | |
| VGS (Gate-Source Voltage) | 20 | V | |
| ID@TA=25 (Continuous Drain Current, VGS @ -10V) | -3 | A | |
| ID@TA=70 (Continuous Drain Current, VGS @ -10V) | -1.7 | A | |
| IDM (Pulsed Drain Current) | -9 | A | |
| PD@TA=25 (Total Power Dissipation) | 1.5 | W | |
| TSTG (Storage Temperature Range) | -55 to 150 | ||
| TJ (Operating Junction Temperature Range) | -55 to 150 | ||
| RJA (Thermal Resistance Junction-ambient) | 125 | /W | |
| RJC (Thermal Resistance Junction-Case) | 80 | /W | |
| Electrical Characteristics (TJ=25, unless otherwise noted) | |||
| BVDSS (Drain-Source Breakdown Voltage) (VGS=0V, ID=-250uA) | -100 | V | |
| RDS(ON) (Static Drain-Source On-Resistance) (VGS=-10V, ID=-3A) | 260 (Typ.) | m | |
| RDS(ON) (Static Drain-Source On-Resistance) (VGS=-4.5V, ID=-2A) | 320 (Typ.) | m | |
| VGS(th) (Gate Threshold Voltage) (VGS=VDS, ID =-250uA) | -1.9 (Typ.) | V | |
| IDSS (Drain-Source Leakage Current) (VDS=-100V, VGS=0V, TJ=25) | 1 (Max.) | uA | |
| IGSS (Gate-Source Leakage Current) (VGS=20V, VDS=0V) | 100 (Max.) | nA | |
| Qg (Total Gate Charge) (VDS=-15V, VGS=-4.5V, ID=-0.5A) | 4.5 (Typ.) | nC | |
| Ciss (Input Capacitance) (VDS=-15V, VGS=0V, f=1MHz) | 550 (Typ.) | pF | |
| Coss (Output Capacitance) (VDS=-15V, VGS=0V, f=1MHz) | 56 (Typ.) | pF | |
| Crss (Reverse Transfer Capacitance) (VDS=-15V, VGS=0V, f=1MHz) | 35 (Typ.) | pF | |
| IS (Continuous Source Current) (VG=VD=0V) | -3 | A | |
| ISM (Pulsed Source Current) | -9 | A | |
| VSD (Diode Forward Voltage) (VGS=0V, IS=-1A, TJ=25) | 1.3 (Max.) | V | |
| Package Mechanical Data: SOT23-3L | |||
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
| A | 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 | |
| A2 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950 (TYP) | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550 (REF) | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 | ||
Applications: Battery protection, Load switch, Uninterruptible power supply.
Marking and Ordering Information:
| Product ID | Pack Marking | Qty(PCS) |
|---|---|---|
| AP3P10MI | 3P10-AP | 3000 |
2410121632_A-Power-microelectronics-AP3P10MI_C3011466.pdf
Related Products
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
