100V N Channel Enhancement Mode MOSFET A Power microelectronics APG110N10NF with low gate charge and RDS
Key Attributes
Model Number:
APG110N10NF
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
110A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
113.6W
Input Capacitance(Ciss):
4.4nF@50V
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
APG110N10NF
Package:
DFN-8(5x6)
Product Description
Product Overview
The APG110N10NF is a 100V N-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced APM-SGT technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including DC/DC converters and LED backlighting.
Product Attributes
- Brand: APM Microelectronics ()
- Technology: APM-SGT
- Mode: N-Channel Enhancement Mode
- Package Type: PDFN5*6-8L
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| VDS | Drain source voltage | 100 | V | |||
| ID | Continuous drain current, TC=25 | 110 | A | |||
| RDS(ON) | Drain-Source on-Resistance | VGS=10V | 4.2 | 6 | m | |
| RDS(ON) | Drain-Source on-Resistance | VGS=4.5V | 6.6 | 9 | m | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain source voltage | (TC=25unless otherwise noted) | 100 | V | ||
| VGS | Gate source voltage | 20 | V | |||
| ID | Continuous drain current, TC=25 | 110 | A | |||
| IDM | Pulsed drain current, TC=25 | 380 | A | |||
| PD | Power dissipation, TC=25 | 113.6 | W | |||
| EAS | Single pulsed avalanche energy | 205 | mJ | |||
| TstgTj | Operation and storage temperature | -55 | 150 | |||
| RJC | Thermal resistance, junction-case | 1.1 | C/W | |||
| RJA | Thermal resistance, junction-ambient | 58 | C/W | |||
| Electrical Characteristics | ||||||
| VDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| lGSS | Gate-body Leakage current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| IDSS | Zero Gate Voltage Drain Current | TJ=25C VDS =100V, VGS = 0V | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | TJ=100C | - | - | 100 | A |
| VGS(th) | Gate-Threshold Voltage | VDS = VGS, ID = 250A | 1.2 | 1.8 | 2.5 | V |
| RDS(on) | Drain-Source on-Resistance | VGS = 10V, ID = 20A | - | 4.2 | 6 | m |
| RDS(on) | Drain-Source on-Resistance | VGS = 4.5V, ID = 15A | - | 6.6 | 9 | m |
| Ciss | Input Capacitance | VDS = 50V, VGS =0V, f =1MHz | - | 4400 | - | pF |
| Coss | Output Capacitance | - | 645 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 20 | - | pF | |
| Rg | Gate Resistance | VGS = 0V, VDS = 0V, f =1MHz | - | 1.7 | - | |
| Qg | Total Gate Charge | VGS = 10V, VDS = 50V, ID=20A | - | 75 | - | nC |
| Qgs | Gate-Source Charge | - | 17 | - | nC | |
| Qgd | Gate-Drain Charge | - | 13 | - | nC | |
| td(on) | Turn-on Delay Time | VGS =10V, VDS =50V, RG = 3, ID= 20A | - | 15.4 | - | ns |
| tr | Rise Time | - | 13 | - | ns | |
| td(off) | Turn-off Delay Time | - | 34 | - | ns | |
| tf | Fall Time | - | 6.2 | - | ns | |
| VSD | Diode Forward Voltage | IF = 20A, VGS = 0V | - | - | 1.2 | V |
| IS | Continuous Source Current | VG=VD=0V , Force Current | - | - | 95 | A |
| trr | Body Diode Reverse Recovery Time | IF = 20A, dI/dt=100A/s | - | - | 55 | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | - | 101 | nC | |
| Package Mechanical Data | ||||||
| Symbol | Description | Min. | Max. | Min. | Max. | Unit |
| A | 1.03 | 1.17 | 0.0406 | 0.0461 | mm / Inch | |
| b | 0.34 | 0.48 | 0.0134 | 0.0189 | mm / Inch | |
| c | 0.824 | 0.0970 | 0.0324 | 0.082 | mm / Inch | |
| D | 4.80 | 5.40 | 0.1890 | 0.2126 | mm / Inch | |
| D1 | 4.11 | 4.31 | 0.1618 | 0.1697 | mm / Inch | |
| D2 | 4.80 | 5.00 | 0.1890 | 0.1969 | mm / Inch | |
| E | 5.95 | 6.15 | 0.2343 | 0.2421 | mm / Inch | |
| E1 | 5.65 | 5.85 | 0.2224 | 0.2303 | mm / Inch | |
| E2 | 1.60 | / | 0.0630 | / | mm / Inch | |
| e | BSC | 1.27 | 0.05 | BSC | ||
| L | 0.05 | 0.25 | 0.0020 | 0.0098 | mm / Inch | |
| L1 | 0.38 | 0.50 | 0.0150 | 0.0197 | mm / Inch | |
| L2 | 0.38 | 0.50 | 0.0150 | 0.0197 | mm / Inch | |
| H | 3.30 | 3.50 | 0.1299 | 0.1378 | mm / Inch | |
| I | / | 0.18 | / | 0.0070 | mm / Inch | |
Product Identification & Ordering
| Product ID | Pack Marking | Qty(PCS) |
|---|---|---|
| APG110N10NF | APG110N10NF XXX YYYY | 5000 |
2410121532_A-Power-microelectronics-APG110N10NF_C3011382.pdf
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