PNP transistor amsem MMBT3906M with 40 volt collector emitter breakdown voltage and 100 milliwatt power dissipation rating
Key Attributes
Model Number:
MMBT3906M
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
100mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3906M
Package:
SOT-723
Product Description
Product Overview
The MMBT3906M is a PNP general-purpose amplifier designed for surface mount applications. It offers a power dissipation capability of 100 mW and a continuous collector current of 200 mA, with an operating and storage junction temperature range of -55 to 150. This device is RoHS compliant and available in a small outline surface mount package.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Certifications: RoHS compliant / Green EMC
- Package Type: SOT723
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current - Continuous | IC | -0.2 | A | |
| Collector Power Dissipation | PC | 100 | mW | Ta=25 |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55+150 | ||
| Collector-Emitter Breakdown Voltage | VCEO | -40 | V | IC=-1.0mA, IB=0 |
| Collector-Base Breakdown Voltage | VCBO | -40 | V | IC=-10A, IE=0 |
| Emitter-Base Breakdown Voltage | VEBO | -5 | V | IE=-10A, IC=0 |
| Collector Cut-off Current | ICBO | -100 | nA | VCB=-40V, IE=0 |
| Collector Cut-off Current | ICEX | -50 | nA | VCE=-30V, VEB(OFF)=-3.0V |
| Emitter Cut-off Current | IEBO | -100 | nA | VEB=-5V, IC=0 |
| DC Current Gain | hFE(1) | 100-300 | IC=-10mA, VCE=-1V | |
| DC Current Gain | hFE(2) | 60 | IC=-50mA, VCE=-1V | |
| DC Current Gain | hFE(3) | 30 | IC=-100mA, VCE=-2V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC=-50mA,IB=-5mA |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | V | IC=-50mA,IB=-5mA |
| Current Gain-Band width Product | fT | 300 | MHz | IC=-10mA, VCE=-20V,f=100MHz |
| Delay Time | td | 35 | ns | VCC=-3.0V,VBE(off)=-0.5V IC=-10mA,IB1=IB2=-1.0mA |
| Rise Time | tr | 35 | ns | VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA |
| Storage Time | ts | 225 | ns | VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA |
| Fall Time | tf | 75 | ns | VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA |
2410121322_amsem-MMBT3906M_C7529044.pdf
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