NPN transistor amsem S9013 with 225mW power dissipation and RoHS compliant surface mount design
Key Attributes
Model Number:
S9013
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S9013
Package:
SOT-23
Product Description
Product Overview
The S9013 is an NPN general-purpose amplifier designed for various electronic applications. It is capable of 225mW power dissipation and operates within a wide temperature range of -55 to 150. Housed in a surface-mount SOT-23 package, this RoHS compliant and Green EMC device offers reliable performance for general amplification needs.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Device Marking Code: S9013
- Package: SOT-23
- Certifications: RoHS compliant / Green EMC
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Emitter Breakdown Voltage | VCEO | IC=1.0mA, IB=0 | 25 | V | |
| Collector-Base Breakdown Voltage | VCBO | IC=100A, IE=0 | 40 | V | |
| Emitter-Base Breakdown Voltage | VEBO | IE=100A, IC=0 | 5.0 | V | |
| Collector Cutoff Current | ICBO | VCB=40V, IE=0 | 100 | nA | |
| Collector Cutoff Current | ICEO | VCE=20V, IB=0 | 100 | nA | |
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 100 | nA | |
| DC Current Gain | hFE | IC=50mA,VCE=1V | 120 | 400 | |
| DC Current Gain | hFE | IC=500mA,VCE=1V | 40 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=500mA,IB=50mA | 0.6 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=500mA,IB=50mA | 1.2 | V | |
| Base- Emitter Voltage | VBE | IE=100mA | 1.4 | V | |
| Current Gain-Bandwidth Product | fT | IC=20mA, VCE=6V,f=30MHz | 150 | MHZ | |
| Output Capacitance | Cob | VCB=6V, IE=0, f=1.0MHz | 8 | PF | |
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | |
| Operating and Storage Junction Temperatures | Tj, Tstg | -55 | +150 | ||
| Thermal Resistance From Junction To Ambient | R JA | 416 | /W |
2410121333_amsem-S9013_C7529100.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
