Medium power NPN transistor amsem MMBTA05 featuring epitaxial planar die and RoHS compliance for circuits
Key Attributes
Model Number:
MMBTA05
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA05
Package:
SOT-23
Product Description
Product Overview
The MMBTA05 is an NPN general-purpose amplifier designed for medium power amplification and switching applications. It features epitaxial planar die construction, RoHS compliance, and a Green EMC rating, contributing to reduced board space and component count. The epoxy meets UL 94 V-0 flammability rating.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Origin: China (implied by company name and URL)
- Certifications: RoHS compliant, Green EMC, UL 94 V-0 Flammability Rating
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VCBO | Collector-Base Voltage | 60 | V | |||
| VCEO | Collector-Emitter Voltage | 60 | V | |||
| VEBO | Emitter-Base Voltage | 4 | V | |||
| IC | Collector Current | 500 | mA | |||
| PD | Power Dissipation | 300 | mW | |||
| Tj | Junction Temperature | -55 | +150 | |||
| Tstg | Storage Temperature | -55 | +150 | |||
| RJA | Thermal Resistance Junction-to-Ambient (Note 1) | 417 | /W | |||
| ICBO | Collector-Base Cutoff Current | VCB = 60 V, IE = 0 | 0.1 | A | ||
| ICEO | Collector-Emitter Cutoff Current | VCE = 60 V, IB = 0 | 1 | A | ||
| IEBO | Emitter-Base Cutoff Current | VEB = 3.0 V, IC = 0 | 0.1 | mA | ||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC = 100A, IE = 0 | 60 | V | ||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC = 1.0mA, IB = 0 | 60 | V | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE = 100A, IC = 0 | 4 | V | ||
| hFE(1) | DC Current Gain | VCE = 1 V, IC = 10 mA | 100 | 400 | ||
| hFE(2) | DC Current Gain | VCE = 1 V, IC = 100 mA | 100 | |||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = 100 mA, IB = 10 mA | 0.25 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC = 100 mA, IB = 10 mA | 1.2 | V | ||
| fT | Transition Frequency | VCE=2V, IC=10mA, f=100MHz | 100 | MHz |
2410121317_amsem-MMBTA05_C7529050.pdf
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