Forward Surge Capability amsem MUR160SA Ultra Fast Recovery Rectifier Diode for Switching Converters
Key Attributes
Model Number:
MUR160SA
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
MUR160SA
Package:
DO-214AC(SMA)
Product Description
Product Overview
The MUR160SA is an Ultra-Fast Recovery Rectifier Diode (FRED) from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, and a glass-passivated chip junction. Its low leakage current and high forward surge capability make it suitable for high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The device meets MSL level 1 requirements.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Model: MUR160SA
- Package: DO-214AC (SMA)
- Material: Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Polarity: Color band denotes cathode end
- Certifications: Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C
Technical Specifications
| Parameter | Symbol | Unit | Conditions | MUR160SA |
| Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | V | 600 | |
| Average Forward Current | IF(AV) | A | Ta=25 | 1.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | Ta=25, 60Hz Half-sine wave,1 cycle | 30 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Electrical Characteristics | ||||
| Peak Forward Voltage | VFM | V | IF=1.0A | 1.3 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | Ta=125 | 300 |
| Reverse Recovery time | Trr | ns | IF =0.5A, IR =1A, IRR =0.25A | 50 |
| Thermal Resistance | RJ-L | /W | Between junction and ambient | 24 |
| Typical junction capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 25 |
| Non repetitive reverse avalanche energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
2410122015_amsem-MUR160SA_C18336926.pdf
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