Compact ARK micro DMS6014E depletion mode power MOSFET with RoHS compliance and halogen free options
Key Attributes
Model Number:
DMS6014E
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
80mA
RDS(on):
150Ω@0V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
62pF@5V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
8nC
Mfr. Part #:
DMS6014E
Package:
SOT-223
Product Description
ARK Microelectronics DMS6014E Depletion-Mode Power MOSFET
The DMS6014E is a depletion-mode (normally on) power MOSFET from ARK Microelectronics, featuring ESD improved capability and a proprietary advanced planar technology with a rugged polysilicon gate cell structure. It offers fast switching speeds and is suitable for applications requiring normally-on switches, SMPS start-up circuits, linear amplifiers, converters, and constant current sources, particularly in the telecom industry. This product is RoHS compliant and available in a halogen-free option.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Model: DMS6014E
- Package: SOT-223
- Marking: 6014
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 600 | V | TA=25 unless otherwise specified [1] |
| Drain-to-Gate Voltage | VDGX | -- | -- | 600 | V | TA=25 unless otherwise specified [1] |
| Continuous Drain Current | ID | -- | -- | 0.08 | A | TA=25 unless otherwise specified |
| Pulsed Drain Current | IDM | -- | -- | 0.32 | A | TA=25 unless otherwise specified [2] |
| Power Dissipation | PD | -- | -- | 1.50 | W | TA=25 unless otherwise specified |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | TA=25 unless otherwise specified |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ and TSTG | -55 | -- | 150 | TA=25 unless otherwise specified | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | -- | -- | V | VGS=-5V, ID=250A |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 1 | A | VDS=600VVGS= -5V |
| Drain-to-Source Leakage Current | ID(OFF) | -- | -- | 100 | A | VDS=600VVGS= -5V, TJ=125 |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 20 | uA | VGS=+20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | -20 | uA | VGS=-20V, VDS=0V |
| Saturated Drain-to-Source Current | IDSS | 100 | -- | -- | mA | VGS=0V, VDS=25V |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 110 | 150 | VGS=0VID=50mA [3] | |
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -- | -1.5 | V | VDS =3V, ID=8A |
| Forward Transconductance | gfs | -- | 77 | -- | mS | VDS =10V, ID=5mA |
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | -- | 62 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Oput Capacitance | COSS | -- | 13 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Reverse Transfer Capacitance | CRSS | -- | 9 | -- | pF | VGS=-5V VDS=25V f=1.0MHZ |
| Total Gate Charge | QG | -- | 8 | -- | nC | VGS=-5V~5V VDS=300V, ID=7mA |
| Gate-to-Source Charge | QGS | -- | 0.6 | -- | nC | VGS=-5V~5V VDS=300V, ID=7mA |
| Gate-to-Drain (Miller) Charge | QGD | -- | 3 | -- | nC | VGS=-5V~5V VDS=300V, ID=7mA |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(ON) | -- | 10 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Rise Time | trise | -- | 22 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Turn-off Delay Time | td(OFF) | -- | 35 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Fall Time | tfall | -- | 210 | -- | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD =100 mA, VGS = -10 V |
Notes:
[1] TJ=+25 to +150
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] Pulse width380s; duty cycle2%.
2411220251_ARK-micro-DMS6014E_C3031424.pdf
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