power management solution ARK micro FTE15C35G 350V N P Dual Channel MOSFET with fast switching speed
Key Attributes
Model Number:
FTE15C35G
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
300mA
RDS(on):
30Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.84pF@25V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
43.39pF
Pd - Power Dissipation:
2.5W
Mfr. Part #:
FTE15C35G
Package:
SOP-8
Product Description
Product Overview
The FTE15C35G is a 350V N+P Dual Channel MOSFET from ARK Microelectronics Co., Ltd. It features proprietary advanced planar technology, a rugged polysilicon gate cell structure, and fast switching speed. This RoHS compliant and halogen-free available component is suitable for power management, load switch, and motor driver applications.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, China
- Certifications: RoHS Compliant, Halogen-free available
- Package: SOP-8
- Marking: 15C35
Technical Specifications
| Parameter | N channel (Min.) | N channel (Typ.) | N channel (Max.) | N channel (Unit) | N channel (Test Conditions) | P channel (Min.) | P channel (Typ.) | P channel (Max.) | P channel (Unit) | P channel (Test Conditions) |
| VDSS (Drain-to-Source Voltage) | 350 | - | - | V | -350 | - | - | V | ||
| VGS (Gate-to-Source Voltage) | - | - | 20 | V | - | - | 20 | V | ||
| ID (Continuous Drain Current) | 0.3 | - | - | A | *Drain Current limited by Maximum Junction Temperature. | -0.2 | - | - | A | *Drain Current limited by Maximum Junction Temperature. |
| IDP (300us Pulsed Drain Current) | 1.2 | - | - | A | Tested[2] | -0.8 | - | - | A | Tested[2] |
| PD (Power Dissipation) | - | - | 2.5 | W | TA=25C | - | - | 2.5 | W | TA=25C |
| TJ and TSTG (Operating and Storage Temp Range) | -55 | - | 150 | -55 | - | 150 | ||||
| RJA (Thermal Resistance, Junction-to-Ambient) | - | 50 | - | /W | - | 50 | - | /W | ||
| BVDSX (Drain-to-Source Breakdown Voltage) | 350 | - | - | V | VGS=0V, ID=250A | -350 | - | - | V | VGS=0V, ID=250A |
| RDS(ON) (Static Drain-to-Source On-Resistance) | - | 8 | 15 | VGS=10V, ID=300mA [3] | - | 18 | 30 | VGS=-10V, ID=-200mA [3] | ||
| VGS(TH) (Gate Threshold Voltage) | 1 | - | 3 | V | VGD =0V, ID=250A | -1 | - | -3 | V | VGD =0V, ID=-250A |
| CISS (Input Capacitance) | - | 32.58 | - | pF | VGS=0V VDS=25V f=1.0MHZ | - | 43.39 | - | pF | VGS=0V VDS=-25V f=1.0MHZ |
| COSS (Output Capacitance) | - | 5.36 | - | pF | - | 6.94 | - | pF | ||
| CRSS (Reverse Transfer Capacitance) | - | 0.75 | - | pF | - | 0.84 | - | pF | ||
| td(ON) (Turn-on Delay Time) | - | 14 | - | ns | VDD = 25V, ID=-80mA RG = 25Ohm VGS = 10V~0V | - | 12 | - | ns | VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm |
| trise (Rise Time) | - | 10 | - | ns | - | 60 | - | ns | ||
| td(OFF) (Turn-off Delay Time) | - | 24 | - | ns | - | 136 | - | ns | ||
| tfall (Fall Time) | - | 36 | - | ns | - | 320 | - | ns | ||
| VSD (Diode Forward Voltage) | - | - | 1.2 | V | ISD =300 mA, VGS = 0 V | - | - | -1.2 | V | ISD =-200 mA, VGS =0 V |
| IDSS (Drain-to-Source Leakage Current) | - | - | 1 | A | VDS=350VVGS= 0V | - | - | -1 | A | VDS=-350VVGS= 0V |
| IDSS (Drain-to-Source Leakage Current @125C) | - | - | 100 | A | VDS=350VVGS= 0V TJ=125 | - | - | -100 | A | VDS=-350VVGS= 0V TJ=125 |
| IGSS (Gate-to-Source Leakage Current) | - | - | 20 | A | VGS=+20V, VDS=0V | - | - | 20 | A | VGS=+20V, VDS=0V |
| IGSS (Gate-to-Source Leakage Current) | - | - | -20 | A | VGS=-20V, VDS=0V | - | - | -20 | A | VGS=-20V, VDS=0V |
2411220220_ARK-micro-FTE15C35G_C3031434.pdf
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