High surge current rectifier amsem H1HV12 featuring glass passivated chip junction for power conversion
Key Attributes
Model Number:
H1HV12
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
H1HV12
Package:
SMA
Product Description
Product Overview
The H1HV12 is a high-efficiency rectifier featuring a low-profile package ideal for automated placement. With a glass-passivated chip junction and high forward surge capability, it is designed for high-frequency rectification in power supplies, inverters, converters, and as freewheeling diodes in consumer and telecommunication applications. It meets MSL level 1 and is AEC-Q101 qualified, making it suitable for automotive applications.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Model: H1HV12
- Package: DO-214AC(SMA)
- Certifications: RoHS-compliant, AEC-Q101 qualified available
Technical Specifications
| Parameter | Symbol | Unit | Conditions | H1HV12 |
| Repetitive Peak Reverse Voltage | VRRM | V | 1200 | |
| Average Forward Current | IF(AV) | A | 60Hz Half-sine wave, Resistance load, Ta(FIG 1) | 1.0 |
| Surge(Nonrepetitive)Forward Current | IFSM | A | 60HZ Half-sine wave, 1 cycle, Ta=25 | 25 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Peak Forward Voltage | VFM | V | IFM =1.0A Tj=25 | 1.70 |
| Peak Forward Voltage | VFM | V | IFM =1.0A Tj=125 | 1.35 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM Ta=125 | 100 |
| Reverse Recovery Time | Trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A | 75 |
| Thermal Resistance(Typical) | RJ-A | /W | Between junction and ambient | 110 |
| Typical Junction Capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 15 |
2410122026_amsem-H1HV12_C22384721.pdf
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