150V N Channel MOSFET ARK micro FTS01N15G with halogen free option and robust gate cell structure
Key Attributes
Model Number:
FTS01N15G
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.3A
RDS(on):
1Ω@5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27.4pF
Number:
1 N-channel
Output Capacitance(Coss):
120.5pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
320.5pF
Gate Charge(Qg):
9.5nC@5V
Mfr. Part #:
FTS01N15G
Package:
SOT-223
Product Description
Product Overview
The FTS01N15G is a 150V N-Channel Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features ESD improved capability, a high-density cell design for extremely low RDS(ON), and a rugged polysilicon gate cell structure. This RoHS compliant and halogen-free available MOSFET is suitable for applications such as relay drivers, high-speed line drivers, and logic level translators.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Certifications: RoHS compliant, Halogen-free available
- Origin: Chengdu, Sichuan
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSX) | Continuous Drain Current (ID) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | RDS(ON) (Typ.) | Gate Threshold Voltage (VGS(th)) | Operating and Storage Temperature Range |
| FTS01N15G | SOT-223 | 150 V | 1.3 A | 1.5 W | 20 V | 0.45 | 1.5 - 2.5 V | -55 to 150 |
2410121606_ARK-micro-FTS01N15G_C3031435.pdf
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