General purpose NPN transistor amsem MMBT5551 featuring wide storage temperature and RoHS compliance
Key Attributes
Model Number:
MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description
Product Overview
The MMBT5551 is an NPN general-purpose amplifier designed for surface mount applications. It offers a power dissipation capability of 300mW and operates within a wide temperature range. This device is RoHS compliant and available in a green EMC SOT-23 package.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co., Ltd.
- Origin: China
- Certification: RoHS compliant / Green EMC
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit |
| VCBO | Collector-Base Voltage | 180 | V | ||
| VCEO | Collector-Emitter Voltage | 160 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| IC | Collector Current | 600 | mA | ||
| PC | Collector Power Dissipation | 300 | mW | ||
| RJA | Thermal Resistance From Junction To Ambient | 416 | /W | ||
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55 | +150 | ||
| VCEO | Collector-emitter breakdown voltage | IC=1.0mA, IB=0 | 160 | V | |
| VCBO | Collector-base breakdown voltage | IC=100A, IE=0 | 180 | V | |
| VEBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6.0 | V | |
| ICBO | Collector cutoff current | VCB=120V, IE=0V | 50 | nA | |
| IEBO | Emitter cut-off current | VEB=4V,IC=0V | 50 | nA | |
| hFE | DC current gain | IC=1mA,VCE=5V | 80 | ||
| hFE | DC current gain | IC=10mA,VCE=5V | 100 | 300 | |
| hFE | DC current gain | IC=50mA,VCE=5V | 50 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=10mA,IB=1.0mA | 0.15 | V | |
| VCE(sat) | Collector-emitter saturation voltage | IC=50mA,IB=5.0mA | 0.2 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC=10mA,IB=1.0mA | 1.0 | ||
| VBE(sat) | Base-emitter saturation voltage | IC=50mA,IB=5.0mA | 1.0 | ||
| fT | Current gain-bandwidth Product | IC=10mA, VCE=10V,f=100MHz | 100 | 300 | MHZ |
| COb | Collector output capacitance | VCB=10V,IE=0,f=1MHZ | 6 | pF |
Ordering Information:
- Device: MMBT5551
- Package: SOT23
- Shipping: Tape & Reel
- Quantity: 3000pcs /7 Reel
- Tape Wide: 8mm
- Embose Pitch: 4mm
- Tape Specification: Conductive
2410121532_amsem-MMBT5551_C7529049.pdf
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