200V N Channel MOSFET ARK micro FTD03N20G featuring low threshold voltage and integrated Zener diode
Key Attributes
Model Number:
FTD03N20G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
RDS(on):
4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.82pF
Output Capacitance(Coss):
34pF
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
178.2pF
Gate Charge(Qg):
5.15nC
Mfr. Part #:
FTD03N20G
Package:
TO-252
Product Description
Product Overview
The FTD03N20G is a 200V N-Channel Enhancement-Mode MOSFET from ARK Microelectronics Co., Ltd. It features a rugged polysilicon gate cell structure, integrated gate-to-source resistor and Zener diode, low on-resistance, low threshold voltage, and low input capacitance. This MOSFET offers fast switching speeds, is free from secondary breakdown, and is available in RoHS compliant and Halogen-free options. It is suitable for applications such as amplifiers, buffers, general-purpose line drivers, high-voltage pulsers, logic-level interfaces, and piezoelectric transducer drivers.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSX | 200 | V | TA=25 unless otherwise specified | ||
| Drain-to-Gate Voltage | VDGX | 200 | V | TA=25 unless otherwise specified | ||
| Continuous Drain Current | ID | 2 | A | TA=25 unless otherwise specified | ||
| Pulsed Drain Current | IDM | A | [2] TA=25 unless otherwise specified | |||
| Power Dissipation | PD | 36 | W | TA=25 unless otherwise specified | ||
| Soldering Temperature | TL | 300 | Distance of 1.6mm from case for 10 seconds | |||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | |||
| Drain-to-Source Breakdown Voltage | BVDSX | 200 | V | VGS=0V, ID=250A | ||
| Drain-to-Source Leakage Current | IDSS | 10 | A | VDS=200V, VGS=0V | ||
| Gate-to-source Shunt Resistor | RGS | 10 | 50 | k | IGS = 100A | |
| Gate-to-Source Zener Voltage | VZGS | 13 | 25 | V | IGS = 2mA | |
| On-state Drain-to-Source Current | ID(ON) | 1 | A | VGS=4.5V, VDS=25V | ||
| On-state Drain-to-Source Current | ID(ON) | 2 | A | VGS=10V, VDS=25V | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 3 | VGS=4.5V, ID=150mA [3] | |||
| Static Drain-to-Source On-Resistance | RDS(ON) | 4 | VGS=10V, ID=1A [3] | |||
| Gate Threshold Voltage | VGS(TH) | 1.0 | 2.4 | V | VGD=0V, ID=250A | |
| Forward Transconductance | gfs | 1.0 | S | VDS=25V, ID=500mA | ||
| Input Capacitance | Ciss | 178.2 | pF | VGS=0V, VDS=25V, f=1.0MHz | ||
| Output Capacitance | Coss | 34.0 | pF | VGS=0V, VDS=25V, f=1.0MHz | ||
| Reverse Transfer Capacitance | Crss | 3.82 | pF | VGS=0V, VDS=25V, f=1.0MHz | ||
| Total Gate Charge | Qg | 5.15 | nC | VGS=10V, VDD=25V, ID=1A | ||
| Gate-to-Source Charge | Qgs | 0.76 | nC | VGS=10V, VDD=25V, ID=1A | ||
| Gate-to-Drain (Miller) Charge | Qgd | 0.52 | nC | VGS=10V, VDD=25V, ID=1A | ||
| Turn-on Delay Time | td(on) | 5.2 | ns | VGS=10V, VDD=25V, ID=1A, RG=25 | ||
| Rise Time | trise | 2.6 | ns | VGS=10V, VDD=25V, ID=1A, RG=25 | ||
| Turn-off Delay Time | td(off) | 15 | ns | VGS=10V, VDD=25V, ID=1A, RG=25 | ||
| Fall Time | tfall | 4.4 | ns | VGS=10V, VDD=25V, ID=1A, RG=25 | ||
| Diode Forward Voltage | VSD | 1.8 | V | ISD=500mA, VGS=0V |
2504101957_ARK-micro-FTD03N20G_C46531783.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
