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quality Power MOSFET ANHI ASB65R120EFD N Channel Device Suitable for Boost PFC and Full Bridge Circuits factory
quality Power MOSFET ANHI ASB65R120EFD N Channel Device Suitable for Boost PFC and Full Bridge Circuits factory

Power MOSFET ANHI ASB65R120EFD N Channel Device Suitable for Boost PFC and Full Bridge Circuits

Key Attributes
Model Number: ASB65R120EFD
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
-
Output Capacitance(Coss):
89pF
Input Capacitance(Ciss):
2.657nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
55.4nC@10V
Mfr. Part #:
ASB65R120EFD
Package:
TO-263
Product Description

Product Overview

This series of N-Channel enhancement mode MOSFETs, including models ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, and ASB65R120EFD, are designed for high-performance power applications. They feature low drain-source on-resistance (RDS(ON) = 0.105 typ.) and easy gate control, making them suitable for demanding switching applications. Key applications include Boost PFC switches, half bridge, asymmetric half bridge, series resonance half bridge, and full bridge topologies. These MOSFETs are ideal for server power, telecom power, EV charging, solar inverters, and UPS systems.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Type: N-Channel MOS

Technical Specifications

Model Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Body diode dv/dt (V/ns)
ASW65R120EFD TO247 ASW65R120EFD 700 120 55.4 90 50
ASA65R120EFD TO220F ASA65R120EFD 700 120 55.4 90 50
ASR65R120EFD TOLL-8L ASR65R120EFD 700 120 55.4 90 50
ASB65R120EFD TO263 ASB65R120EFD 700 120 55.4 90 50
Parameter Symbol Value Unit Condition
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 3 - 5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 2 uA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS +/- 100 nA VGS=+/-30V, VDS=0V
Drain-source on-state resistance RDS(on) 0.105 - 0.120 VGS=10V, ID=14A, Tj=25C
Transconductance Gfs 29.2 S VDS=20V, ID=15A
Continuous drain current ID - 30 A TC=25C, limited by Tj,max, D=0.50
Pulsed drain current ID,pulse - 90 A TC=25C, pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - 1216 mJ Tc=25,VDD=50V, L=10mH, RG=25
Avalanche current, single pulse IAR - 10.9 A Tc=25,VDD=50V,L=10mH, RG=25
MOSFET dv/dt ruggedness dv/dt - 36.2 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (TO247) Ptot - 277.8 W TC=25C
Power dissipation (TO220F) Ptot - 36.5 W TC=25C
Storage temperature Tstg -55 - 150 C -
Operating junction temperature Tj -55 - 150 C -
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Reverse diode dv/dt dv/dt - 50 V/ns VDS=400V, ISD<= ID, Tj=25C
Thermal resistance, junction - case (TO220F) RthJC - 3.4 C/W -
Thermal resistance, junction - ambient (TO220F) RthJA - 62 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (TO247,TOLL,TO263) RthJC - 0.45 C/W -
Thermal resistance, junction - ambient (TO247,TOLL,TO263) RthJA - 57 C/W device on PCB, minimal footprint
Input capacitance Ciss - 2657 pF VGS=0V, VDS=100V, f=1MHz
Output capacitance Coss - 89 pF VGS=0V, VDS=100V, f=1MHz
Reverse transfer capacitance Crss - 2 pF VGS=0V, VDS=100V, f=1MHz
Turn-on delay time td(on) - 29.6 ns VDD=400V,VGS=10V,ID=19A, RG=2
Rise time tr - 31.3 ns VDD=400V,VGS=10V,ID=19A, RG=2
Turn-off delay time td(off) - 94.6 ns VDD=400V,VGS=10V,ID=19A, RG=2
Fall time tf - 9.1 ns VDD=400V,VGS=10V,ID=19A, RG=2
Gate to source charge Qgs - 15 nC VDD=400V, ID=19A, VGS=0 to 10V
Gate to drain charge Qgd - 20.2 nC VDD=400V, ID=19A, VGS=0 to 10V
Gate charge total Qg - 55.4 nC VDD=400V, ID=19A, VGS=0 to 10V
Gate plateau voltage Vplateau - 5.9 V VDD=400V, ID=19A, VGS=0 to 10V
Diode forward voltage VSD - 0.67 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr - 136.7 ns VR=400V, IF=17A,diF/dt=100A/s
Reverse recovery charge Qrr - 0.741 uC VR=400V, IF=17A,diF/dt=100A/s
Peak reverse recovery current Irrm - 10.28 A VR=400V, IF=17A,diF/dt=100A/s

2410121535_ANHI-ASB65R120EFD_C22470098.pdf

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