Glass passivated chip junction diode amsem MUR220S with repetitive peak reverse voltage of 200 volts
Key Attributes
Model Number:
MUR220S
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
950mV@2A
Current - Rectified:
2A
Mfr. Part #:
MUR220S
Package:
SMB
Product Description
Product Overview
The MUR220S is an Ultra-Fast Recovery Rectifier Diode from Anhui Anmei Semiconductor Co., Ltd. It features low power loss, ultra-fast recovery time for high efficiency, a glass-passivated chip junction, low leakage current, and high forward surge capability. It is designed for high frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment. The product meets MSL level 1, per J-STD-020, with a maximum peak of 260 C.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Document Number: 804012
- Revision: 21-Mar-20
- Material: Glass passivated chip junction
- Packaging: DO-214AA (SMB)
- Certifications: UL 94 V-0 flammability rating, RoHS-compliant, Meets MSL level 1, per J-STD-020
Technical Specifications
| Parameter | Symbol | Unit | Conditions | MUR220S |
| Repetitive Peak Reverse Voltage | VRRM | V | 200 | |
| Average Forward Current | I F(AV) | A | Ta=25 | 2.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | Ta=25, 60Hz Half-sine wave, 1 cycle | 60 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Peak Forward Voltage | VFM | V | IF=2.0A | 0.95 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | Ta=125 | 300 |
| Reverse Recovery time | Trr | ns | IF =0.5A, IR =1A, RR =0.25A | 35 |
| Thermal Resistance(Typical) | RJ-L | /W | Between junction and ambient | 20 |
| Typical junction capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 25 |
| Non repetitive reverse avalanche energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
2410122015_amsem-MUR220S_C18336928.pdf
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