N Channel MOSFET AUW033N08BG Designed for Telecommunications and High Speed Industrial Applications
Key Attributes
Model Number:
AUW033N08BG
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.3mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
43.4pF
Pd - Power Dissipation:
340W
Input Capacitance(Ciss):
7.463nF
Gate Charge(Qg):
109nC
Mfr. Part #:
AUW033N08BG
Package:
TO-247
Product Description
Product Overview
The AUB033N08BG, AUP033N08BG, and AUW033N08BG are N-Channel MOSFETs designed for synchronous rectification and hard switching in DC/DC converters. They are suitable for high-speed circuits, telecommunications, and industrial applications. Key features include low drain-source on-resistance, high switching speed, enhanced body diode ruggedness, and dv/dt capability.
Product Attributes
- Brand: AUB/AUP/AUW
- Channel Type: N-Channel
- Technology: MOSFET
Technical Specifications
Key Performance Parameters
| Parameter | Symbol | Value | Unit | Notes/Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS @ Tj,max | 85 | V | VGS=0V, ID=10mA |
| Drain-Source On-Resistance (max) | RDS(on),max | 3.3 | m | VGS=10V, ID=20A, Tj=25C |
| Gate Charge (typ.) | Qg,typ | 109 | nC | VDS=40V, VGS=0 to 10V, ID=20A |
| Pulsed Drain Current (typ.) | ID,pulse | 640 | A | TC=25C |
Models and Packaging
| Part Name | Package | Marking |
|---|---|---|
| AUB033N08BG | TO-263 | AUB033N08BG |
| AUP033N08BG | TO-220 | AUP033N08BG |
| AUW033N08BG | TO-247 | AUW033N08BG |
Maximum Ratings
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | 160 (TC=25C) 115 (TC=100C) | - | A | Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 640 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 884 | mJ | - |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Power dissipation (TO220) | Ptot | - | - | 370 | W | TC=25C |
| Power dissipation (TO263) | Ptot | - | - | 179 | W | TC=25C |
| Power dissipation (TO247) | Ptot | - | - | 340 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 175 | C | - |
| Operating junction temperature | Tj | -55 | - | 175 | C | - |
Thermal Characteristics (TO220)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 0.42 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
Thermal Characteristics (TO263)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 0.7 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
Thermal Characteristics (TO247)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 0.44 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 40 | C/W | device on PCB, minimal footprint |
Electrical Characteristics (Static)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | - | - | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.5 | 3.5 | - | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1000 | nA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 2.9 | 3.3 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 0.7 | - | f=1MHz, open drain |
Electrical Characteristics (Dynamic)
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | - | 7463 | - | pF | Vds=40V,Vgs=0V, f=1MHz |
| Output capacitance | Coss | - | 1292 | - | pF | Vds=40V,Vgs=0V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 43.4 | - | pF | Vds=40V,Vgs=0V, f=1MHz |
| Turn-on delay time | td(on) | - | 24 | - | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Rise time | tr | - | 53 | - | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Turn-off delay time | td(off) | - | 107 | - | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Fall time | tf | - | 66 | - | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Gate to source charge | Qgs | - | 27.5 | - | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate to drain charge | Qgd | - | 26.4 | - | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate charge total | Qg | - | 109 | - | nC | VDS=40V,VGS=0 to 10V, ID=20A |
Reverse Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Diode forward voltage | VSD | - | 0.67 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 52 | - | ns | VR=40V,IF=20A, diF/dt=200A/us |
| Reverse recovery charge | Qrr | - | 137 | - | uC | VR=40V,IF=20A,diF/dt=200A/us |
| Peak reverse recovery current | Irrm | - | -3.7 | - | A | VR=40V,IF=20A,diF/dt=200A/us |
2410121538_ANHI-AUW033N08BG_C5440030.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
