power switching Silicon MOSFET ANHI AUR014N10 with enhanced dv dt capability and low on resistance
Key Attributes
Model Number:
AUR014N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
395A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
398pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
313W
Input Capacitance(Ciss):
13nF@50V
Gate Charge(Qg):
231nC
Mfr. Part #:
AUR014N10
Package:
TOLL
Product Description
Product Overview
The AUR014N10 is a Silicon N-Channel MOS MOSFET designed for high-speed power switching applications. It features a low drain-source on-resistance of 1.2m (typ.) and enhanced body diode dv/dt capability, making it ideal for synchronous rectification in SMPS, hard switching, and high-speed DC/DC circuits within the telecommunications and industrial sectors. Its robust design also includes enhanced avalanche ruggedness.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Package Type: TOLL-8L
- Internal Circuit: N-Channel MOS
Technical Specifications
| Parameter | Value | Unit | Note / Test Condition |
|---|---|---|---|
| Key Performance Parameters | |||
| VDS @ Tj,max | 100 | V | |
| RDS(on),max | 1.4 | m | |
| Qg,typ | 231 | nC | |
| ID,pulse | 987 | A | |
| Maximum Ratings | |||
| Continuous drain current at silicon (TC=25C) | - | 395 | A |
| Continuous drain current at package (TC=25C) | - | 316 | A |
| Continuous drain current at silicon (TC=100C) | 250 | - | A |
| Pulsed drain current (TC=25C) | - | 987 | A |
| Avalanche energy, single pulse (Tc=25, VDD=50V, Vgs=10V, L=1mH, RG=25) | - | 1250 | mJ |
| Avalanche current, single pulse (Tc=25, VDD=50V, L=1mH, RG=25) | - | 50 | A |
| Gate source voltage (static) | -20 | 20 | V |
| Power dissipation (TC=25C) | - | 313 | W |
| Storage temperature | -55 | 150 | C |
| Operating junction temperature | -55 | 150 | C |
| Soldering Temperature (Distance of 1.6mm from case for 10s) | - | 260 | C |
| Thermal Characteristics | |||
| Thermal resistance, junction - case | - | 0.4 | C/W |
| Thermal resistance, junction - ambient (device on PCB, minimal footprint) | - | 40 | C/W |
| Static Characteristics (Tj=25C) | |||
| Drain-source breakdown voltage (VGS=0V, ID=250uA) | 100 | - | V |
| Gate threshold voltage (VDS=VGS, ID=250uA) | 2 | 4 | V |
| Zero gate voltage drain current (VDS=80V, VGS=0V, Tj=25C) | - | 1 | uA |
| Gate-source leakage current (VGS=+/-20V, VDS=0V) | - | +/-100 | nA |
| Drain-source on-state resistance (VGS=10V, ID=30A, Tj=25C) | - | 1.4 | m |
| Gate resistance (Intrinsic) (f=1MHz, open drain) | - | 0.7 | |
| Transconductance (VDS=5V, ID=50A) | 108 | - | S |
| Dynamic Characteristics (Tj=25C) | |||
| Input capacitance (VGS=0V, VDS=50V, f=1MHz) | - | 13000 | PF |
| Output capacitance (VGS=0V, VDS=50V, f=1MHz) | - | 2147 | PF |
| Reverse transfer capacitance (VGS=0V, VDS=50V, f=1MHz) | - | 398 | PF |
| Turn-on delay time (VDD=50V,VGS=10V,ID=1A, RG=1) | - | 27.7 | ns |
| Rise time (VDD=50V,VGS=10V,ID=1A, RG=1) | - | 21.5 | ns |
| Turn-off delay time (VDD=50V,VGS=10V,ID=1A, RG=1) | - | 89.6 | ns |
| Fall time (VDD=50V,VGS=10V,ID=1A, RG=1) | - | 96.8 | ns |
| Gate Charge Characteristics (VDD=50V, ID=100A, VGS=10V) | |||
| Gate to source charge (Qgs) | - | 70.2 | nC |
| Gate to drain charge (Qgd) | - | 65.7 | nC |
| Gate charge total (Qg) | - | 231 | nC |
| Reverse Diode Characteristics | |||
| Continuous Source Current at silicon | - | 395 | A |
| Diode forward voltage (VGS=0V, Is=30A, Tj=25C) | - | 0.75 - 1.1 | V |
| Reverse recovery time (Vgs=0V, IF=30A, diF/dt=100A/s) | - | 120 | ns |
| Reverse recovery charge (Vgs=0V, IF=30A, diF/dt=100A/s) | - | 400 | nC |
2410121517_ANHI-AUR014N10_C7494988.pdf
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