Silicon N Channel MOSFET ANHI ASW65R031EFD Designed for EV Charging Solar Inverter and Telecom Power
Key Attributes
Model Number:
ASW65R031EFD
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
89A
RDS(on):
31mΩ@10V,28A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.56pF
Number:
1 N-channel
Output Capacitance(Coss):
140.7pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
8.031nF
Gate Charge(Qg):
150.9nC@10V
Mfr. Part #:
ASW65R031EFD
Package:
TO-247
Product Description
Product Overview
The ASW65R031EFD is a Silicon N-Channel MOSFET designed for high-efficiency power conversion applications. It features a low drain-source on-resistance of 0.027 (typ.) and is easy to control with a gate switching enhancement mode. This MOSFET is ideal for soft switching boost PFC circuits, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. Its applications span Server Power, Telecom Power, EV Charging, and Solar Inverters.
Product Attributes
- Brand: Not explicitly mentioned, but implied by part number prefix 'ASW'
- Material: Silicon N-Channel MOS
- Package: TO247
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Part Name | ASW65R031EFD | |||
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3.2 - 4.8 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.027 - 0.031 | VGS=10V, ID=28A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 3.3 | f=1MHz, open drain | |
| Input capacitance | Ciss | 8031 | pF | VGS=0V, VDS=400V, f=1MHz |
| Output capacitance | Coss | 140.7 | pF | VGS=0V, VDS=400V, f=1MHz |
| Reverse transfer capacitance | Crss | 1.56 | pF | VGS=0V, VDS=400V, f=1MHz |
| Turn-on delay time | td(on) | 39 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Rise time | tr | 56 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Turn-off delay time | td(off) | 138 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Fall time | tf | 7.3 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Gate to source charge | Qgs | 40.4 | nC | VDD =400V, ID =28A, VGS =10V |
| Gate to drain charge | Qgd | 54.9 | nC | VDD =400V, ID =28A, VGS =10V |
| Gate charge total | Qg | 150.9 | nC | VDD =400V, ID =28A, VGS =10V |
| Gate plateau voltage | Vplateau | 5.9 | V | VDD =400V, ID =28A, VGS =10V |
| Diode forward voltage | VSD | 0.63 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 182 | ns | Vr=400v,IF=28A,di/dt=100A/us |
| Reverse recovery charge | Qrr | 1.66 | uC | Vr=400v,IF=28A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | 16.4 | A | Vr=400v,IF=28A,di/dt=100A/us |
| Continuous drain current | ID | 89 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 267 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 414 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | 9.1 | A | Tc=25,VDD=50V,L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | 80 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | 500 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0...400V, ISD<=45A, Tj=25C |
| Thermal resistance, junction - case | RthJC | 0.25 | C/W | |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
2410121615_ANHI-ASW65R031EFD_C19192887.pdf
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