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quality Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON and fast switching factory
quality Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON and fast switching factory

Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON and fast switching

Key Attributes
Model Number: ASDM30P30BE-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
RDS(on):
10mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
315pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.757nF@15V
Pd - Power Dissipation:
3.7W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
ASDM30P30BE-R
Package:
PDFN3.3x3.3-8
Product Description

Product Overview

The Ascend Semiconductor ASDM30P30BE is a P-Channel MOSFET designed for various power management applications. It features low RDS(ON) and fast switching capabilities, making it suitable for MB, VGA, Vcore, and POL applications. This device is also available as a Green Device.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Type: P-Channel MOSFET
  • Package Type: PDFN3.3*3.3-8
  • Green Device: Available

Technical Specifications

Product Summary
Model ASDM30P30BE
VDSS -30 V
RDS(ON) Typ @ VGS=-10V 10 m
ID -30 A
Absolute Maximum Ratings (TA=25 unless otherwise specified)
Symbol Parameter Max. Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current (TC = 25) -30 A
ID Continuous Drain Current (TC = 100) -7 A
IDM Pulsed Drain Current (note1) -90 A
PD Power Dissipation (TA = 25) 3.7 W
TJ, TSTG Operating and Storage Temperature Range -55 to +150
Thermal Characteristics
Symbol Parameter Rating Unit
RJC Thermal Resistance-Junction to Case (Steady State) 4.6 C/W
RJA Thermal Resistance-Junction to Ambient (Steady State) (Note ) 62 C/W
Electrical Characteristics (TJ=25 unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250A -30 - - V
IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V - - -1 A
IGSS Gate to Body Leakage Current VDS =0V, VGS = 20V - - 100 nA
On Characteristic
VGS(th) Gate Threshold Voltage VDS= VGS, ID= -250A -1.0 -1.5 -2.5 V
RDS(on) Static Drain-Source on-Resistance (note2) VGS =-10V, ID =-10A - 10 14 m
RDS(on) Static Drain-Source on-Resistance (note2) VGS =-4.5V, ID =-5A - 14.4 20 m
Dynamic Characteristic
Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz - 1757 - pF
Coss Output Capacitance - 371 - pF
Crss Reverse Transfer Capacitance - 315 - pF
Qg Total Gate Charge VDS= -15V, ID = -9.1A, VGS = -10V - 30 - nC
Qgs Gate-Source Charge - 5.3 - nC
Qgd Gate-Drain(Miller) Charge - 7.6 - nC
Switching Characteristic
td(on) Turn-on Delay Time VDD = -15V, ID = -6A, VGS=-10V, RGEN=2.5 - 14 - ns
tr Turn-on Rise Time - 20 - ns
td(off) Turn-off Delay Time - 95 - ns
tf Turn-off Fall Time - 65 - ns
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current - - -30 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - -90 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = -10A - - -1.2 V

Notes:

  • Max. current is limited by bonding wire
  • UIS tested and pulse width are limited by maximum junction temperature
  • Surface Mounted on 1in FR-4 board with 1oz.
  • 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
  • 2. Pulse Test: Pulse Width300s, Duty Cycle2%

2410121434_ASDsemi-ASDM30P30BE-R_C5354035.pdf

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