Low RDS on Resistance Silicon MOSFET ASA65R350E N Channel for Server Power and UPS Applications
Key Attributes
Model Number:
ASA65R350E
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
11A
RDS(on):
350mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.3pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
901pF@50V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
22nC
Mfr. Part #:
ASA65R350E
Package:
TO-220F
Product Description
Product Overview
The ASA65R350E, ASU65R350, and ASD65R350E are N-Channel Silicon MOSFETs designed for various power applications. They feature a low drain-source on-resistance (RDS(on)) and are easy to control, operating in enhancement mode. These MOSFETs are suitable for PFC stages, hard switching PWM, resonant switching PWM, PC Silverbox, Adaptors, LCD & PDP TVs, Lighting, Server Power, Telecom Power, and UPS applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
Technical Specifications
| Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | DS(ON) () |
|---|---|---|---|---|---|---|
| ASA65R350E | TO220F | 700 | 350 | 22 | 33 | 0.318 (typ.) |
| ASU65R350 | TO251 | 700 | 350 | 22 | 33 | 0.318 (typ.) |
| ASD65R350E | TO252 | 700 | 350 | 22 | 33 | 0.318 (typ.) |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.318 - 0.35 | VGS=10V, ID=5.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 11 | - | f=1MHz, open drain |
| Input capacitance | Ciss | - 901 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 59 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.3 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 7.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Rise time | tr | - 20.8 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Turn-off delay time | td(off) | - 29.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Fall time | tf | - 19.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Gate to source charge | Qgs | - 5.8 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate to drain charge | Qg | - 17 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate charge total | Qg | - 22 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.3 | V | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.74 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 250 | ns | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 2.572 | uC | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 19.6 | A | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Thermal resistance, junction - case (TO220F) | RthJC | - 4.0 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO251, TO252) | RthJC | - 1.5 | C/W | - |
| Thermal resistance, junction - ambient (TO251, TO252) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
2410121550_ANHI-ASA65R350E_C5440002.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
