Trench Power LV N Channel MOSFET 20V model ASDsemi ASDM3416EZA R suitable for PWM and load switching
Key Attributes
Model Number:
ASDM3416EZA-R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
18mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Output Capacitance(Coss):
147pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
640pF
Gate Charge(Qg):
8.1nC@4.5V
Mfr. Part #:
ASDM3416EZA-R
Package:
SOT-23
Product Description
Product Overview
The Ascend Semiconductor ASDM3416EZA is a 20V N-Channel MOSFET featuring Trench Power LV MOSFET technology for high power and current handling capability. It offers ESD protection up to 3.5KV (HBM) and is ideal for PWM applications and load switching.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Technology: Trench Power LV MOSFET
- Channel Type: N-Channel
- ESD Protection: Up to 3.5KV (HBM)
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-source Voltage | VDS | 20 | V | |
| Gate-source Voltage | VGS | ±12 | V | |
| Drain Current @ TA=25 @ Steady State | ID | 7.0 | A | |
| Drain Current @ TA=70 @ Steady State | ID | 5.6 | A | |
| Pulsed Drain Current | IDM | 28 | A | |
| Total Power Dissipation @ TA=25 | PD | 1.3 | W | |
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | 96 | / W | |
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||
| Product Summary | ||||
| Drain-source Voltage | V DS | 20 | V | |
| Drain Current | I D | 7.0 | A | |
| Static Parameter | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 20 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | 2.5 | ±10 A |
| Gate-Body Leakage Current | IGSS | VGS= ±5V, VDS=0V | 300 | ±1000 nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.45 - 0.62 - 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=7.0A | 16 - 18 | m |
| VGS= 2.5V, ID=4.0A | 19 - 22 | |||
| VGS= 1.8V, ID=3.0A | 25 - 39 | |||
| Diode Forward Voltage | VSD | IS=7.0A,VGS=0V | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 7.0 | A | |
| Dynamic Parameters | ||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 640 | pF |
| Output Capacitance | Coss | 147 | ||
| Reverse Transfer Capacitance | Crss | 78 | ||
| Switching Parameters | ||||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=7.0A | 8.1 | nC |
| Gate Source Charge | Qgs | 2.4 | ||
| Gate Drain Charge | Qg d | 3 | ||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V, RL=1.5, RGEN=3 | 1.2 | ns |
| Turn-on Rise Time | tr | 2.4 | ||
| Turn-off Delay Time | tD(off) | 22 | ||
| Turn-off Fall Time | tf | 7 | ||
| Package Information | ||||
| Package | SOT-23 | |||
| Ordering Device No. | ASDM3416EZA-R | |||
| Marking | 8810. | |||
| Packing Quantity | 3000/Reel | |||
2410121536_ASDsemi-ASDM3416EZA-R_C2972886.pdf
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