AUP034N10 Silicon MOSFET with TO220 Package Featuring Low RDSon and High Speed Switching Performance
Key Attributes
Model Number:
AUP034N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
195A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.4mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Output Capacitance(Coss):
-
Pd - Power Dissipation:
330W
Input Capacitance(Ciss):
10nF
Gate Charge(Qg):
138nC@10V
Mfr. Part #:
AUP034N10
Package:
TO-220
Product Description
Product Overview
The AUP034N10, AUB034N10, and AUR030N10 are N-Channel MOSFETs designed for high-efficiency applications. These devices feature low drain-source on-resistance, high-speed power switching, and enhanced body diode dv/dt capability. They are ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Key performance parameters include a VDS of 100V and low RDS(on) values of 2.8m (typ.) for TO220/TO263 packages and 2.4m (typ.) for the TOLL-8L package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max TO220&TO263 (m) | RDS(on),max TOLL (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|
| AUP034N10 | TO220 | AUP034N10 | 100 | 3.4 | - | 138 | 856 |
| AUB034N10 | TO263 | AUB034N10 | 100 | 3.4 | - | 138 | 856 |
| AUR030N10 | TOLL | AUR030N10 | 100 | - | 3.0 | 138 | 856 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current at silicon | ID | 214 | A | TC=25C, limited by Tj,max |
| Continuous drain current at package | ID | 195 | A | TC=25C, limited by Tj,max |
| Continuous drain current at silicon | ID | 151 | A | TC=100C, limited by Tj,max |
| Pulsed drain current | ID,pulse | 856 | A | TC=25C, pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 512 | mJ | Tc=25, VDD=40V, Vgs=10V, L=1mH, RG=25 |
| Avalanche current, single pulse | IAR | 32 | A | Tc=25, VDD=40V, L=1mH, RG=25 |
| Gate source voltage (static) | VGS | 20 | V | static |
| Power dissipation | Ptot | 330 | W | TC=25C |
| Storage temperature | Tstg | -55 to 175 | C | - |
| Operating junction temperature | Tj | -55 to 175 | C | - |
| Soldering Temperature | TL | 300 | C | Distance of 1.6mm from case for 10s |
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2 to 4 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (TO220&TO263) | RDS(on) | 2.8 to 3.4 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TOLL) | RDS(on) | 2.4 to 3.0 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 2.6 | f=1MHz, open drain | |
| Transconductance | Gfs | 197.2 | S | VDS=5V, ID=90A |
| Input capacitance | Ciss | 10000 | pF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | 2900 | pF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | 280 | pF | VGS=0V, VDS=25V, f=1MHz |
| Turn-on delay time | td(on) | 38 | ns | VDD=50V, VGS=10V, ID=80A, RG=2.5 |
| Rise time | tr | 50 | ns | VDD=50V, VGS=10V, ID=80A, RG=2.5 |
| Turn-off delay time | td(off) | 69 | ns | VDD=50V, VGS=10V, ID=80A, RG=2.5 |
| Fall time | tf | 33 | ns | VDD=50V, VGS=10V, ID=80A, RG=2.5 |
| Gate to source charge | Qgs | 58 | nC | VDD=50V, ID=80A, VGS=10V |
| Gate to drain charge | Qgd | 44 | nC | VDD=50V, ID=80A, VGS=10V |
| Gate charge total | Qg | 138 | nC | VDD=50V, ID=80A, VGS=10V |
| Continuous Source Current at silicon | ISD | 214 | A | - |
| Diode forward voltage | VSD | 1.2 | V | VGS=0V, Is=80A, Tj=25C |
| Reverse recovery time | trr | 95 | ns | Vgs=0V, IF=80A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 143 | nC | Vgs=0V, IF=80A, diF/dt=100A/s |
| Package Type | Thermal Resistance Junction-Case (RthJC) (C/W) | Thermal Resistance Junction-Ambient (RthJA) (C/W) |
|---|---|---|
| TO263&TO252 | 0.46 | 63 (device on PCB, minimal footprint) |
| TOLL | 0.28 | 48 (device on PCB, minimal footprint) |
2410121510_ANHI-AUP034N10_C18199768.pdf
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