Silicon N Channel MOSFET ANHI ASW60R029EFD Suitable for Phase Shift Bridge LLC and AHB Applications
Key Attributes
Model Number:
ASW60R029EFD
Product Custom Attributes
Configuration:
Half-Bridge
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
90A
RDS(on):
29mΩ@10V,28A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.44pF
Number:
1 N-channel
Output Capacitance(Coss):
165.6pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
8.001nF
Gate Charge(Qg):
153.3nC@10V
Mfr. Part #:
ASW60R029EFD
Package:
TO-247
Product Description
Product Overview
The ASW60R029EFD is a Silicon N-Channel MOSFET designed for soft switching applications. It is ideal for use in Boost PFC, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. This MOSFET is well-suited for demanding applications such as Server Power, Telecom Power, EV Charging, and Solar Inverters. Key features include a low drain-source on-resistance (RDS(ON) = 0.025 typ.), easy gate control, and enhancement mode operation with a threshold voltage (Vth) of 3.2 to 4.8 V.
Product Attributes
- Brand: ASW
- Type: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=250uA | |
| Gate threshold voltage | V(GS)th | 3.2 - 4.8 | V | VDS=VGS, ID=250uA | |
| Zero gate voltage drain current | IDSS | - | 5 | uA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.025 - 0.029 | VGS=10V, ID=28A, Tj=25C | ||
| Gate resistance (Intrinsic) | RG | - | 3.3 | f=1MHz, open drain | |
| Continuous drain current | ID | - | 90 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | 270 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | 414 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | 9.1 | A | Tc=25,VDD=50V,L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - | 80 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static | |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) | |
| Power dissipation | Ptot | - | 500 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - | |
| Operating junction temperature | Tj | -55 - 150 | C | - | |
| Soldering Temperature | TL | - | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - | 50 | V/ns | VDS=0...400V, ISD<=45A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - | 0.25 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - | 8001 | pF | VGS=0V, VDS=400V, f=1MHz |
| Output capacitance | Coss | - | 165.6 | pF | VGS=0V, VDS=400V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 0.44 | pF | VGS=0V, VDS=400V, f=1MHz |
| Turn-on delay time | td(on) | - | 33 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Rise time | tr | - | 55 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Turn-off delay time | td(off) | - | 147 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Fall time | tf | - | 6.4 | ns | VDD=400V,VGS=10V,ID=28A RG=3.4 |
| Gate to source charge | Qgs | - | 37.6 | nC | VDD =400V, ID =28A, VGS =10V |
| Gate to drain charge | Qgd | - | 54.9 | nC | VDD =400V, ID =28A, VGS =10V |
| Gate charge total | Qg | - | 153.3 | nC | VDD =400V, ID =28A, VGS =10V |
| Gate plateau voltage | Vplateau | - | 5.6 | V | VDD =400V, ID =28A, VGS =10V |
| Diode forward voltage | VSD | - | 0.63 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 180 | ns | Vr=400v,IF=28A,di/dt=100A/us |
| Reverse recovery charge | Qrr | - | 1.62 | uC | Vr=400v,IF=28A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | - | 16.44 | A | Vr=400v,IF=28A,di/dt=100A/us |
| Part Name | Package | Marking |
|---|---|---|
| ASW60R029EFD | TO247 | ASW60R029EFD |
2410121615_ANHI-ASW60R029EFD_C19192886.pdf
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