High Voltage Silicon N Channel MOSFET ASA80R290E Suitable for Flyback and Forward Topology Circuits
Key Attributes
Model Number:
ASA80R290E
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
290mΩ
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
1.728nF@100V
Pd - Power Dissipation:
227W
Gate Charge(Qg):
38.8nC
Mfr. Part #:
ASA80R290E
Package:
TO-220F
Product Description
Product Overview
The ASA80R290E and ASW80R290E are Silicon N-Channel Power MOSFETs designed for high-efficiency power conversion applications. These MOSFETs feature low drain-source on-resistance (RDS(on)) and easy gate control, making them ideal for single-ended flyback or two-transistor forward topologies. They are well-suited for use in PC power supplies, PD Adapters, LCD & PDP TVs, and LED lighting applications. The devices are available in TO220F and TO247 packages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA80R290E | TO220F | ASA80R290E | 800 | 290 | 38.8 | 45 |
| ASW80R290E | TO247 | ASW80R290E | 800 | 290 | 38.8 | 45 |
| Parameter | Symbol | Values (Min.) | Values (Typ.) | Values (Max.) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Continuous drain current | ID | - | - | 15 | A | TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 45 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 500 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 121 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - | - | 227 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | |
| Operating junction temperature | Tj | -55 | - | 150 | C | |
| Reverse diode dv/dt | dv/dt | - | - | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal Characteristics (TO220F) | ||||||
| Thermal resistance, junction - case | RthJC | - | - | 3.6 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
| Thermal Characteristics (TO247) | ||||||
| Thermal resistance, junction - case | RthJC | - | - | 0.55 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | 805 | - | - | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 | - | 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=800V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 0.250 | 0.290 | VGS=10V, ID=7.2A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - | 25 | - | f=1MHz, open drain | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | 1728 | - | pF | VGS=0V, VDS=100V, f=100kHz |
| Output capacitance | Coss | - | 46 | - | pF | VGS=0V, VDS=100V, f=100kHz |
| Reverse transfer capacitance | Crss | - | 0.78 | - | pF | VGS=0V, VDS=100V, f=100kHz |
| Turn-on delay time | td(on) | - | 29 | - | ns | VDD=400V,VGS=10V,ID=17A, RG=5 |
| Rise time | tr | - | 42 | - | ns | VDD=400V,VGS=10V,ID=17A, RG=5 |
| Turn-off delay time | td(off) | - | 137 | - | ns | VDD=400V,VGS=10V,ID=17A, RG=5 |
| Fall time | tf | - | 36 | - | ns | VDD=400V,VGS=10V,ID=17A, RG=5 |
| Gate Charge Characteristics | ||||||
| Gate to source charge | Qgs | - | 8.6 | - | nC | VDD=600V, ID=17A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 13.4 | - | nC | VDD=600V, ID=17A, VGS=0 to 10V |
| Gate charge total | Qg | - | 38.8 | - | nC | VDD=600V, ID=17A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - | 5 | - | V | VDD=600V, ID=17A, VGS=0 to 10V |
| Reverse Diode Characteristics | ||||||
| Diode forward voltage | VSD | - | 0.7 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 427 | - | ns | VR=400V, IF=17A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 6.8 | - | uC | VR=400V, IF=17A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 29 | - | A | VR=400V, IF=17A, diF/dt=100A/s |
Package Outlines
Figure 1: Outline PG-TO247
Figure 2: Outline PG-TO220F
2410121538_ANHI-ASA80R290E_C5440007.pdf
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