Power switching N Channel Silicon MOSFET ANHI ASB60R150E with enhancement mode operation and low RDS
Key Attributes
Model Number:
ASB60R150E
Product Custom Attributes
Drain To Source Voltage:
605V
Current - Continuous Drain(Id):
28A
RDS(on):
150mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.07pF
Output Capacitance(Coss):
218pF
Input Capacitance(Ciss):
2.389nF
Pd - Power Dissipation:
195W
Gate Charge(Qg):
47.59nC@10V
Mfr. Part #:
ASB60R150E
Package:
TO-263
Product Description
Product Overview
The ASA60R150E, ASW60R150E, and ASB60R150E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These devices feature a low drain-source on-resistance (RDS(ON) = 0.120 typ.) and are easy to control due to their enhancement mode operation. They are suitable for a wide range of applications including PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems. Key applications include boost PFC switches, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge topologies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Continuous Drain Current (A) | Pulsed Drain Current (A) | Avalanche Energy, Single Pulse (mJ) | Gate Source Voltage (static) (V) | Gate Source Voltage (dynamic) (V) | Power Dissipation (TO220F) (W) | Power Dissipation (TO247&263) (W) | Drain-Source Breakdown Voltage (V) | Gate Threshold Voltage (V) | Zero Gate Voltage Drain Current (A) | Gate-Source Leakage Current (nA) | Drain-Source On-State Resistance () | Gate Resistance (Intrinsic) () | Input Capacitance (pF) | Output Capacitance (pF) | Reverse Transfer Capacitance (pF) | Turn-on Delay Time (ns) | Rise Time (ns) | Turn-off Delay Time (ns) | Fall Time (ns) | Gate to Source Charge (nC) | Gate to Drain Charge (nC) | Gate Charge Total (nC) | Gate Plateau Voltage (V) | Diode Forward Voltage (V) | Reverse Recovery Time (ns) | Reverse Recovery Charge (C) | Peak Reverse Recovery Current (A) | Thermal Resistance, Junction-Case (TO220F) (C/W) | Thermal Resistance, Junction-Ambient (TO220F) (C/W) | Thermal Resistance, Junction-Case (TO247&263) (C/W) | Thermal Resistance, Junction-Ambient (TO247&263) (C/W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ASA60R150E | TO220F | ASA60R150E | 650 | 150 | 47.6 | 84 | 28 | 84 | 605 | -20 to 20 | -30 to 30 | 34 | 195 | 605 | 2.8 to 4.2 | 1 | 100 | 0.12 to 0.15 | 5.8 | 2389 | 218 | 5.07 | 12.4 | 21.6 | 50 | 18.4 | 8.522 | 8.297 | 47.59 | 5.4 | 0.7 | 288 | 4.3 | 26.2 | 3.65 | 80 | 0.64 | 62 |
| ASW60R150E | TO247 | ASW60R150E | 650 | 150 | 47.6 | 84 | 28 | 84 | 605 | -20 to 20 | -30 to 30 | 34 | 195 | 605 | 2.8 to 4.2 | 1 | 100 | 0.12 to 0.15 | 5.8 | 2389 | 218 | 5.07 | 12.4 | 21.6 | 50 | 18.4 | 8.522 | 8.297 | 47.59 | 5.4 | 0.7 | 288 | 4.3 | 26.2 | 3.65 | 80 | 0.64 | 62 |
| ASB60R150E | TO263 | ASB60R150E | 650 | 150 | 47.6 | 84 | 28 | 84 | 605 | -20 to 20 | -30 to 30 | 34 | 195 | 605 | 2.8 to 4.2 | 1 | 100 | 0.12 to 0.15 | 5.8 | 2389 | 218 | 5.07 | 12.4 | 21.6 | 50 | 18.4 | 8.522 | 8.297 | 47.59 | 5.4 | 0.7 | 288 | 4.3 | 26.2 | 3.65 | 80 | 0.64 | 62 |
2410121535_ANHI-ASB60R150E_C22470097.pdf
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