ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low On State Resistance
Key Attributes
Model Number:
ASDM30P11TD-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
309pF
Number:
1 P-Channel
Output Capacitance(Coss):
400pF
Input Capacitance(Ciss):
3.482nF
Pd - Power Dissipation:
31.2W
Gate Charge(Qg):
61nC@10V
Mfr. Part #:
ASDM30P11TD-R
Package:
DFN-8(3x3)
Product Description
Product Overview
The Ascend Semiconductor ASDM30P11TD is a -30V P-Channel MOSFET designed for power switch circuits in adaptors, chargers, and notebook AC-in load switches. It features low FOM (RDS(on)Qgd), 100% avalanche testing, and is easy to use and drive. This RoHS compliant component offers a continuous drain current of -55A at 25C and a low on-state resistance of 6.4 m (typ.) at VGS = -10V. Its robust design makes it suitable for battery protection charge/discharge applications.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Type: P-Channel MOSFET
- Package Type: PDFN3*3-8
- Compliance: RoHS compliant
- Testing: 100% avalanche tested
- Ease of Use: Easy to use/drive
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
|---|---|---|---|---|
| Model Number | ASDM30P11TD | |||
| Drain-Source Voltage | VDS | VGS=0V | -30 | V |
| On-State Resistance (typ.) | RDS(on) | VGS = -10V, ID = -20A | 6.4 | m |
| On-State Resistance (max.) | RDS(on) | VGS = -10V, ID = -20A | 8 | m |
| On-State Resistance (typ.) | RDS(on) | VGS = -4.5V, ID = -10A | 10.5 | m |
| On-State Resistance (max.) | RDS(on) | VGS = -4.5V, ID = -10A | 13 | m |
| Continuous Drain Current | ID | TC = 25C | -55 | A |
| Continuous Drain Current | ID | TC = 100C | -34.6 | A |
| Pulsed Drain Current | ID,pulse | -220 | A | |
| Gate-Source Voltage | VGSS | 25 | V | |
| Single Pulse Avalanche Energy | EAS | 200 | mJ | |
| Power Dissipation | PD | TA = 25C | 31.2 | W |
| Operating & Storage Temperature | TJ, Tstg | -55 to +150 | C | |
| Thermal Resistance (Junction-to-Case) | RthJC | 4 | C/W | |
| Thermal Resistance (Junction-to-Ambient) | RthJA | 35 | C/W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -30V, VGS = 0V, TJ = 25C | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V, TJ = 125C | -100 | A |
| Gate-Source Leakage Current | IGSS | VGS = 25V | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.2 to -2.5 | V |
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1.0MHz | 3482 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = -15V, f = 1.0MHz | 400 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -15V, f = 1.0MHz | 309 | pF |
| Total Gate Charge | Qg | VDS = -15V, ID = -10A, VGS = -10V | 61 | nC |
| Gate-Source Charge | Qgs | VDS = -15V, ID = -10A, VGS = -10V | 12 | nC |
| Gate-Drain Charge | Qgd | VDS = -15V, ID = -10A, VGS = -10V | 10 | nC |
| Turn-on Delay Time | td(on) | VDS = -15V, VGS = -10V, RG = 3, ID = -10A | 19 | ns |
| Turn-on Rise Time | tr | VDS = -15V, VGS = -10V, RG = 3, ID = -10A | 33 | ns |
| Turn-off Delay Time | td(off) | VDS = -15V, VGS = -10V, RG = 3, ID = -10A | 38 | ns |
| Turn-off Fall Time | tf | VDS = -15V, VGS = -10V, RG = 3, ID = -10A | 15 | ns |
| Body Diode Forward Voltage | VSD | TJ = 25C, ISD = -10A, VGS = 0V | -1.2 | V |
| Continuous Diode Forward Current | IS | -55 | A | |
| Reverse Recovery Time | trr | IF = -10A, diF/dt = -100A/s | 45 | ns |
| Reverse Recovery Charge | Qrr | IF = -10A, diF/dt = -100A/s | 29 | nC |
2410121738_ASDsemi-ASDM30P11TD-R_C2758227.pdf
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