N Channel MOSFET ASE70R950E Designed for Power Switching in Flyback Converters and LED Lighting
Key Attributes
Model Number:
ASE70R950E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
6A
RDS(on):
950mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
4.55pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
377pF@50V
Pd - Power Dissipation:
37W
Gate Charge(Qg):
10.3nC
Mfr. Part #:
ASE70R950E
Package:
SOT223-2L
Product Description
Product Overview
The ASA70R950E, ASD70R950E, and ASE70R950E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 0.870 typ.) and are easy to control via gate switching. They are ideally suited for single-ended flyback converters, power adapters, LCD & PDP TVs, and LED lighting applications.
Product Attributes
- Type: N-Channel Silicon MOSFET
- Mode: Enhancement mode
Technical Specifications
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA70R950E | TO220F | ASA70R950E | 750 | 950 | 10.3 | 18 |
| ASD70R950E | TO252 | ASD70R950E | 750 | 950 | 10.3 | 18 |
| ASE70R950E | SOT223-2L | ASE70R950E | 750 | 950 | 10.3 | 18 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 705 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | 1 | uA VDS=700V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 | nA VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.87 - 0.95 | VGS=10V, ID=2A, Tj=25C | |
| Continuous drain current | ID | - 6 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 18 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 180 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Avalanche current, single pulse | IAS | - 6 | A | Tc=25,VDD=50V,L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 36 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 26 | W | TC=25C |
| Power dissipation (TO252/SOT223) | Ptot | - 37 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Continuous diode forward current | IS | - 6 | A | TC=25C |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case (TO220F) | RthJC | - 4.9 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO252/SOT223) | RthJC | - 3.41 | C/W | - |
| Thermal resistance, junction - ambient (TO252/SOT223) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 377 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 33 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 4.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 8.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Rise time | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Turn-off delay time | td(off) | - 45.2 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Fall time | tf | - 24.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Gate to source charge | Qgs | - 1.845 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 2.723 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate charge total | Qg | - 10.3 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 6.4 | V | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.77 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 124 | ns | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 0.88 | uC | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 10 | A | VR=400V, IF=2.5 A, diF/dt=100A/s |
2410121525_ANHI-ASE70R950E_C5440015.pdf
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