Versatile semiconductor device ANHI ASW65R120EFD for electronic circuits and industrial applications
Key Attributes
Model Number:
ASW65R120EFD
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
30A
RDS(on):
120mΩ@10V,14A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
89pF
Pd - Power Dissipation:
277.8W
Input Capacitance(Ciss):
2.657nF
Gate Charge(Qg):
55.4nC@10V
Mfr. Part #:
ASW65R120EFD
Package:
TO-247
Product Description
Product Overview
This product line includes models ASW65R120EFD, ASA65R120EFD, and ASR65R120EFD. Further details regarding its function, usage, advantages, and application scenarios are not explicitly provided in the input text.
Product Attributes
No specific product attributes such as brand, origin, material, or color were identified in the provided text.
Technical Specifications
| Model | Specification |
|---|---|
| ASW65R120EFD | 65R120EFD |
| ASA65R120EFD | 65R120EFD |
| ASR65R120EFD | 65R120EFD |
2410121545_ANHI-ASW65R120EFD_C18723001.pdf
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