Industrial welding and inverter power supply solution ANHI AGW60N65 trench FS Cool Watt IGBT device

Name: Industrial welding and inverter power supply solution ANHI AGW60N65 trench FS Cool Watt IGBT device
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: AGW60N65
Availability: InStock

Key Attributes

Model Number: AGW60N65

Product Custom Attributes

Td(off):

540ns

Pd - Power Dissipation:

375W

Td(on):

125ns

Collector-Emitter Breakdown Voltage (Vces):

650V

Input Capacitance(Cies):

6.92nF

IGBT Type:

FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic):

5.45V

Operating Temperature:

Gate Charge(Qg):

254nC

Reverse Recovery Time(trr):

121ns

Switching Energy(Eoff):

2.13mJ

Turn-On Energy (Eon):

2.38mJ

Mfr. Part #:

AGW60N65

Package:

TO-247

Product Description

AGW60N65 Trench-FS Cool-Watt IGBT

Product Overview
The AGW60N65 is a Trench-FS Cool-Watt IGBT designed for demanding power applications. It features low VCESAT and low switching losses, enhanced by its CoolWatt Trench-FS technology. The device includes an anti-parallel fast recovery diode and offers a positive temperature coefficient for high reliability. It is ideal for use in inverter power supplies and industrial welding applications.

Product Attributes

Brand: Cool-Watt
Technology: Trench-FS
Package: TO247

Technical Specifications

Key Performance Parameters

Parameter	Value	Unit
VCES	650	V
VCE(sat)	1.4	V
VGE(th)	5.45	V
Qg,typ	254	nC
ICpuls	180	A
Part Name	AGW60N65	-
Package	TO247	-
Marking	AGW60N65	-

Maximum Ratings

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Collector-emitter voltage	VCES	650	-	-	V	TC=25C
DC collector current	IC	-	120	-	A	TC=25C
		-	60	-	A	TC=100C
Pulse collector current	ICpuls	-	-	180	A	Tvj150
Repetitive peak reverse voltage	VRRM	650	-	-	V	TC=25C
Diode continuous forward current	IF	-	-	120	A	TC=25C
		-	-	60	A	TC=100C
Diode pulse current	IFpuls	-	-	180	A	Tvj150
Gate-emitter voltage	VGE	-20	-	20	V	static
		-30	-	30	V	Transienttp10uS,D0.01
Power dissipation	Ptot	-	-	375	W	TC=25C
Storage temperature	Tstg	-50	-	150	C	-
Operating junction temperature	Tj	-40	-	175	C	-
Soldering Temperature	TL	-	-	260	C	Distance of 1.6mm from case for 10s

Thermal Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
IGBT thermal resistance junction - case	RthJC-IGBT	-	-	0.40	K/W	-
FRD thermal resistance junction - case	RthJC-FRD	-	-	0.90	K/W	-
Thermal resistance junction - ambient	RthJA	-	-	40	K/W	-

Static Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Collector-emitter breakdown voltage	V(BR)CES	650	-	-	V	VGE = 0V,IC=0.5mA,Tvj=25
Collector-emitter saturation voltage	VCE(sat)	-	1.4	2	V	VGE=15V, IC=30A, Tvj=25
		-	1.95	-	V	VGE=15V, IC=30A, Tvj=150
Gate-emitter threshold voltage	VGE(th)	5.05	5.45	5.85	V	VGE= VCE,IC=1.5mA,Tvj=25
Diode forward voltage	VF	-	1.75	2.15	V	VGE= 0V,IF=30A, Tvj=25
		-	1.65	-	V	VGE= 0V,IF=30A,Tvj=150
Zero collector voltage gate current	IGES	-	-	200	nA	VGE=30V,VCE=0V
Zero gate voltage collector current	ICES	-	-	0.5	mA	VCE =650V,VGE=0V, Tvj=25
		-	-	1.0	mA	VCE =650V,VGE=0V, Tvj=150
Integrated gate resistor	RGin		0

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Input capacitance	Cies	-	6920	-	pF	VGE = 0V,VCE= 30V, = 1MHz, Tvj=25
Output capacitance	Coes	-	199	-	pF	VGE = 0V,VCE= 30V, = 1MHz, Tvj=25
Reverse transfer capacitance	Cres	-	88	-	pF	VGE = 0V,VCE= 30V, = 1MHz, Tvj=25
Gate charge	Qg	-	254	-	nC	VGE=0/15V,Vcc=520V,IC=60A,Tvj=25
Gate-emitter charge	Qge	-	40.2	-	nC	VGE=0/15V,Vcc=520V,IC=60A,Tvj=25
Gate-collector charge	Qgc	-	132	-	nC	VGE=0/15V,Vcc=520V,IC=60A,Tvj=25
Gate-emitter plateau voltage	VGE(pl)	-	8.80	-	V	IC =60A,VCE=520V,VGE=0/15V,Tvj=25

Switching Characteristics (Tvj=25)

Parameter	Symbol	Typ.	Unit	Note / Test Condition
Turn-on delay time	Td(on)	125	ns	Vcc=400V,Ic=60A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25
Rise time	Tr	136	ns	-
Turn-off delay time	Td(off)	540	ns	-
Fall time	tf	71	ns	-
Turn-on energy	Eon	2.38	mJ	-
Turn-off energy	Eoff	2.13	mJ	-
Total switch energy	Etotal	4.51	mJ	-

Switching Characteristics (Tvj=150)

Parameter	Symbol	Typ.	Unit	Note / Test Condition
Turn-on delay time	Td(on)	113	ns	Vcc=400V,Ic=60A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150
Rise time	Tr	135	ns	-
Turn-off delay time	Td(off)	612	ns	-
Fall time	tf	86	ns	-
Turn-on energy	Eon	3.10	mJ	-
Turn-off energy	Eoff	2.64	mJ	-
Total switch energy	Etotal	5.74	mJ	-

Diode Characteristics (Tvj=25)

Parameter	Symbol	Typ.	Unit	Note / Test Condition
Reverse recovery energy	Erec	137	uJ	IF =30A,VR=400V, VGE =0/15V,RON=20,Tvj=25
Diode reverse recovery time	trr	96	nS	-
Diode reverse recovery charge	Qrr	562	nC	-
Diode peak reverse recovery current	Irrm	11.6	A	-
Diode peak rate of fall of reverse Recovery current during trr	dirr/dt	217	A/uS	-

Diode Characteristics (Tvj=150)

Parameter	Symbol	Typ.	Unit	Note / Test Condition
Reverse recovery energy	Erec	323	uJ	IF =30A,VR=400V, VGE =0/15V,RON=20,Tvj=150
Diode reverse recovery time	trr	121	nS	-
Diode reverse recovery charge	Qrr	1567	nC	-
Diode peak reverse recovery current	Irrm	19.4	A	-
Diode peak rate of fall of reverse Recovery current during trr	dirr/dt	154	A/uS	-

Package Outline

PG-TO247(HT)

2410121642_ANHI-AGW60N65_C7494996.pdf

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Industrial welding and inverter power supply solution ANHI AGW60N65 trench FS Cool Watt IGBT device