Robust Silicon Carbide Schottky Diode Bestirpower BCH65S08D3 650V 8A for Data Center Power Solutions
Key Attributes
Model Number:
BCH65S08D3
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
76A
Reverse Leakage Current (Ir):
2uA@650V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.45V@8A
Current - Rectified:
8A
Mfr. Part #:
BCH65S08D3
Package:
TO-220-2
Product Description
Product Overview
The BCH65S08D3 is a 650V, 8A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications requiring high power efficiency, featuring negligible reverse recovery, high-speed switching, and a positive temperature coefficient. It is suitable for high-frequency operations with low heat dissipation requirements, contributing to reduced system size and cost. Key applications include switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Technology: Silicon Carbide Schottky Diode
- Compliance: RoHS compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Parameters | ||||||
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | |||
| IF | Forward Current | TC = 25 | 25 | A | ||
| TC = 135 | 11 | A | ||||
| TC = 154 | 8 | A | ||||
| IF,SM | Non-Repetitive Forward Surge Current | TC = 25, tp = 10 ms | 76 | A | ||
| TC = 110, tp = 10 ms | 68 | A | ||||
| IF,RM | Repetitive Peak Forward Surge Current | TC = 25, tp = 10 ms | 67 | A | ||
| I2dt value | I2t | TC = 25, tp = 10 ms | 32 | As | ||
| TC = 110, tp = 10 ms | 28 | As | ||||
| Ptot | Power Dissipation | TC = 25 | 100 | W | ||
| TC = 110 | 43 | W | ||||
| TC = 150 | 16 | W | ||||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | Typ. | 1.495 | /W | ||
| Electrical Characteristics | ||||||
| VDC | DC blocking voltage | 650 | - | - | V | |
| VF | Forward Voltage | IF=8ATJ=25 | - | 1.45 | 1.7 | V |
| IF=8ATJ=175 | - | 1.75 | - | V | ||
| IR | Reverse Current | VR = 650 V, TJ= 25 | - | 2 | 20 | A |
| VR = 650 V, TJ= 175 | - | 40 | - | A | ||
| QC | Total Capacitive Charge | VR = 400 V, TJ = 25 | - | 22 | - | nC |
| C | Total Capacitance | VR = 0 V, f = 1MHz | - | 440 | - | pF |
| VR = 200 V, f = 1MHz | - | 44 | - | pF | ||
| VR = 400 V, f = 1MHz | - | 38 | - | pF | ||
| EC | Capacitance Stored Energy | VR = 400 V, TC = 25 | - | 5.8 | - | J |
| Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BCH65S08D3 | BCH65S08D3 | TO220-2 | Tube | 50 units | ||
2504101957_Bestirpower-BCH65S08D3_C46472734.pdf
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