Soft Fast Recovery Diode AlphaIGBT 650V 40A AOS AOK40B65H2AL for High Switching Speed and Low Switching Loss
AOK40B65H2AL AlphaIGBT with Soft and Fast Recovery Anti-Parallel Diode
Product Overview
The AOK40B65H2AL is a 650V, 40A AlphaIGBT featuring a very fast and soft recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology, offering high switching efficiency, excellent turn-on di/dt controllability, and very high switching speeds with low turn-off switching loss and softness. Its robust design also contributes to very good EMI behavior, making it suitable for demanding applications such as welding machines, UPS & solar inverters, and very high switching frequency applications.
Product Attributes
- Brand: AOS
- Technology: AlphaIGBT ( IGBT)
- Package Type: TO247
- Form: Tube
Technical Specifications
| Parameter | Conditions | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | TA=25C unless otherwise noted | V CE | 650 | V | ||
| Collector-Emitter Voltage | BV CES | 650 | V | |||
| Continuous Collector Current | TC=25C | I C | 80 | A | ||
| Continuous Collector Current | TC=100C | I C | 40 | A | ||
| Pulsed Collector Current | Limited by TJmax | I CM | 120 | A | ||
| Continuous Diode Forward Current | TC=25C | I F | 40 | A | ||
| Continuous Diode Forward Current | TC=100C | I F | 20 | A | ||
| Diode Pulsed Current | Limited by TJmax | I FM | 120 | A | ||
| Gate-Emitter Voltage | V GE | -30 | +30 | V | ||
| Power Dissipation | TC=25C | P D | 300 | W | ||
| Junction and Storage Temperature Range | T J , T STG | -55 | 150 | C | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | T L | 260 | C | |||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | TC=100C | R q JC | 0.48 | C/W | ||
| Maximum Diode Junction-to-Case | R q JC | 1.6 | C/W | |||
| Maximum Junction-to-Ambient | R q JA | 40 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | VGE=0V, IC=1mA | BV CES | 650 | V | ||
| Collector-Emitter Saturation Voltage | IC=40A, VGE=15V | V CE(sat) | 2.05 | 2.6 | V | |
| Collector-Emitter Saturation Voltage | IC=40A, VGE=15V, TJ=125C | V CE(sat) | 2.14 | V | ||
| Collector-Emitter Saturation Voltage | IC=40A, VGE=15V, TJ=150C | V CE(sat) | 2.1 | V | ||
| Diode Forward Voltage | IF=20A, TJ=25C | V F | 2.12 | 2.7 | V | |
| Diode Forward Voltage | IF=20A, TJ=125C | V F | 2.14 | V | ||
| Diode Forward Voltage | IF=20A, TJ=150C | V F | 2.1 | V | ||
| Gate-Emitter Threshold Voltage | IC=1mA, VGE=0V | V GE(th) | 4.7 | V | ||
| Zero Gate Voltage Collector Current | VCE=650V, VGE=0V | I CES | 10 | A | ||
| Zero Gate Voltage Collector Current | VCE=650V, VGE=0V, TJ=125C | I CES | 500 | A | ||
| Zero Gate Voltage Collector Current | VCE=650V, VGE=0V, TJ=150C | I CES | 5000 | A | ||
| Gate-Emitter leakage current | VGE=0V, IF=20A | I GES | 100 | nA | ||
| Forward Transconductance | VCE=5V, IC=1mA | g FS | 24 | S | ||
| Input Capacitance | VGE=0V, VCC=25V, f=1MHz | C ies | 1230 | pF | ||
| Output Capacitance | VGE=0V, VCC=25V, f=1MHz | C oes | 115 | pF | ||
| Reverse Transfer Capacitance | VGE=0V, VCC=25V, f=1MHz | C res | 44 | pF | ||
| Total Gate Charge | VGE=15V, VCC=520V, IC=40A | Q g | 61 | nC | ||
| Gate to Emitter Charge | VGE=15V, VCC=520V, IC=40A | Q ge | 18 | nC | ||
| Gate to Collector Charge | VGE=15V, VCC=520V, IC=40A | Q gc | 27 | nC | ||
| Gate resistance | R g | 11 | ||||
| Switching Parameters (Load Inductive, TJ=25C) | ||||||
| Turn-On Delay Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t D(on) | 30 | ns | ||
| Turn-On Rise Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t r | 30 | ns | ||
| Turn-Off Delay Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t D(off) | 117 | ns | ||
| Turn-Off Fall Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t f | 16 | ns | ||
| Turn-On Energy | VGE=15V, VCC=400V, IC=40A, RG=7.5W | E on | 1.17 | mJ | ||
| Turn-Off Energy | VGE=15V, VCC=400V, IC=40A, RG=7.5W | E off | 0.54 | mJ | ||
| Total Switching Energy | VGE=15V, VCC=400V, IC=40A, RG=7.5W | E total | 1.71 | mJ | ||
| Switching Parameters (Load Inductive, TJ=150C) | ||||||
| Turn-On Delay Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t D(on) | 29 | ns | ||
| Turn-On Rise Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t r | 35 | ns | ||
| Turn-Off Delay Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t D(off) | 133 | ns | ||
| Turn-Off Fall Time | VGE=15V, VCC=400V, IC=40A, RG=7.5W | t f | 18 | ns | ||
| Turn-On Energy | VGE=15V, VCC=400V, IC=40A, RG=7.5W | E on | 1.27 | mJ | ||
| Turn-Off Energy | VGE=15V, VCC=400V, IC=40A, RG=7.5W | E off | 0.78 | mJ | ||
| Total Switching Energy | VGE=15V, VCC=400V, IC=40A, RG=7.5W | E total | 2.06 | mJ | ||
| Diode Switching Parameters (TJ=25C) | ||||||
| Diode Reverse Recovery Time | IF=20A, dI/dt=200A/ms, VCC=400V | t rr | 315 | ns | ||
| Diode Reverse Recovery Charge | IF=20A, dI/dt=200A/ms, VCC=400V | Q rr | 0.7 | mC | ||
| Diode Peak Reverse Recovery Current | IF=20A, dI/dt=200A/ms, VCC=400V | I rm | 4.7 | A | ||
| Diode Switching Parameters (TJ=150C) | ||||||
| Diode Reverse Recovery Time | IF=20A, dI/dt=200A/ms, VCC=400V | t rr | 413 | ns | ||
| Diode Reverse Recovery Charge | IF=20A, dI/dt=200A/ms, VCC=400V | Q rr | 1.2 | mC | ||
| Diode Peak Reverse Recovery Current | IF=20A, dI/dt=200A/ms, VCC=400V | I rm | 5.8 | A | ||
| Turn off SOA, VCE650V, Limited by TJmax | I LM | 40 | A | |||
| Minimum Order Quantity | 240 | |||||
Applications:
- Welding Machines
- UPS & Solar Inverters
- Very High Switching Frequency Applications
2504101957_AOS-AOK40B65H2AL_C17588896.pdf
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