Soft Fast Recovery Diode AlphaIGBT 650V 40A AOS AOK40B65H2AL for High Switching Speed and Low Switching Loss

Key Attributes
Model Number: AOK40B65H2AL
Product Custom Attributes
Td(off):
117ns
Pd - Power Dissipation:
-
Td(on):
30ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.23nF@25V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.7V@1mA
Gate Charge(Qg):
61nC
Operating Temperature:
-
Reverse Recovery Time(trr):
315ns
Switching Energy(Eoff):
540uJ
Turn-On Energy (Eon):
1.17mJ
Mfr. Part #:
AOK40B65H2AL
Package:
TO-247
Product Description

AOK40B65H2AL AlphaIGBT with Soft and Fast Recovery Anti-Parallel Diode

Product Overview

The AOK40B65H2AL is a 650V, 40A AlphaIGBT featuring a very fast and soft recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology, offering high switching efficiency, excellent turn-on di/dt controllability, and very high switching speeds with low turn-off switching loss and softness. Its robust design also contributes to very good EMI behavior, making it suitable for demanding applications such as welding machines, UPS & solar inverters, and very high switching frequency applications.

Product Attributes

  • Brand: AOS
  • Technology: AlphaIGBT ( IGBT)
  • Package Type: TO247
  • Form: Tube

Technical Specifications

Parameter Conditions Symbol Min Typ Max Units
Absolute Maximum Ratings
Collector-Emitter Voltage TA=25C unless otherwise noted V CE 650 V
Collector-Emitter Voltage BV CES 650 V
Continuous Collector Current TC=25C I C 80 A
Continuous Collector Current TC=100C I C 40 A
Pulsed Collector Current Limited by TJmax I CM 120 A
Continuous Diode Forward Current TC=25C I F 40 A
Continuous Diode Forward Current TC=100C I F 20 A
Diode Pulsed Current Limited by TJmax I FM 120 A
Gate-Emitter Voltage V GE -30 +30 V
Power Dissipation TC=25C P D 300 W
Junction and Storage Temperature Range T J , T STG -55 150 C
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 260 C
Thermal Characteristics
Maximum IGBT Junction-to-Case TC=100C R q JC 0.48 C/W
Maximum Diode Junction-to-Case R q JC 1.6 C/W
Maximum Junction-to-Ambient R q JA 40 C/W
Electrical Characteristics (TJ=25C unless otherwise noted)
Collector-Emitter Breakdown Voltage VGE=0V, IC=1mA BV CES 650 V
Collector-Emitter Saturation Voltage IC=40A, VGE=15V V CE(sat) 2.05 2.6 V
Collector-Emitter Saturation Voltage IC=40A, VGE=15V, TJ=125C V CE(sat) 2.14 V
Collector-Emitter Saturation Voltage IC=40A, VGE=15V, TJ=150C V CE(sat) 2.1 V
Diode Forward Voltage IF=20A, TJ=25C V F 2.12 2.7 V
Diode Forward Voltage IF=20A, TJ=125C V F 2.14 V
Diode Forward Voltage IF=20A, TJ=150C V F 2.1 V
Gate-Emitter Threshold Voltage IC=1mA, VGE=0V V GE(th) 4.7 V
Zero Gate Voltage Collector Current VCE=650V, VGE=0V I CES 10 A
Zero Gate Voltage Collector Current VCE=650V, VGE=0V, TJ=125C I CES 500 A
Zero Gate Voltage Collector Current VCE=650V, VGE=0V, TJ=150C I CES 5000 A
Gate-Emitter leakage current VGE=0V, IF=20A I GES 100 nA
Forward Transconductance VCE=5V, IC=1mA g FS 24 S
Input Capacitance VGE=0V, VCC=25V, f=1MHz C ies 1230 pF
Output Capacitance VGE=0V, VCC=25V, f=1MHz C oes 115 pF
Reverse Transfer Capacitance VGE=0V, VCC=25V, f=1MHz C res 44 pF
Total Gate Charge VGE=15V, VCC=520V, IC=40A Q g 61 nC
Gate to Emitter Charge VGE=15V, VCC=520V, IC=40A Q ge 18 nC
Gate to Collector Charge VGE=15V, VCC=520V, IC=40A Q gc 27 nC
Gate resistance R g 11
Switching Parameters (Load Inductive, TJ=25C)
Turn-On Delay Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t D(on) 30 ns
Turn-On Rise Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t r 30 ns
Turn-Off Delay Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t D(off) 117 ns
Turn-Off Fall Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t f 16 ns
Turn-On Energy VGE=15V, VCC=400V, IC=40A, RG=7.5W E on 1.17 mJ
Turn-Off Energy VGE=15V, VCC=400V, IC=40A, RG=7.5W E off 0.54 mJ
Total Switching Energy VGE=15V, VCC=400V, IC=40A, RG=7.5W E total 1.71 mJ
Switching Parameters (Load Inductive, TJ=150C)
Turn-On Delay Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t D(on) 29 ns
Turn-On Rise Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t r 35 ns
Turn-Off Delay Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t D(off) 133 ns
Turn-Off Fall Time VGE=15V, VCC=400V, IC=40A, RG=7.5W t f 18 ns
Turn-On Energy VGE=15V, VCC=400V, IC=40A, RG=7.5W E on 1.27 mJ
Turn-Off Energy VGE=15V, VCC=400V, IC=40A, RG=7.5W E off 0.78 mJ
Total Switching Energy VGE=15V, VCC=400V, IC=40A, RG=7.5W E total 2.06 mJ
Diode Switching Parameters (TJ=25C)
Diode Reverse Recovery Time IF=20A, dI/dt=200A/ms, VCC=400V t rr 315 ns
Diode Reverse Recovery Charge IF=20A, dI/dt=200A/ms, VCC=400V Q rr 0.7 mC
Diode Peak Reverse Recovery Current IF=20A, dI/dt=200A/ms, VCC=400V I rm 4.7 A
Diode Switching Parameters (TJ=150C)
Diode Reverse Recovery Time IF=20A, dI/dt=200A/ms, VCC=400V t rr 413 ns
Diode Reverse Recovery Charge IF=20A, dI/dt=200A/ms, VCC=400V Q rr 1.2 mC
Diode Peak Reverse Recovery Current IF=20A, dI/dt=200A/ms, VCC=400V I rm 5.8 A
Turn off SOA, VCE650V, Limited by TJmax I LM 40 A
Minimum Order Quantity 240

Applications:

  • Welding Machines
  • UPS & Solar Inverters
  • Very High Switching Frequency Applications

2504101957_AOS-AOK40B65H2AL_C17588896.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.