Power MOSFET ASA65R850E N Channel Silicon Device with Low On Resistance and Versatile Package Options
Key Attributes
Model Number:
ASA65R850E
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
6A
RDS(on):
850mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
4.55pF
Input Capacitance(Ciss):
377pF
Pd - Power Dissipation:
27W
Gate Charge(Qg):
10.3nC
Mfr. Part #:
ASA65R850E
Package:
TO-220F
Product Description
Product Overview
The ASA65R850E, ASU65R850, and ASD65R850E are N-Channel Silicon MOSFETs designed for various power applications. These devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for boost PFC switch, single-ended flyback, PC power, PD adaptors, LCD & PDP TVs, and LED lighting. They are available in TO220F, TO251, and TO252 packages, offering flexibility for different design requirements.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Channel Type: N-Channel
- Technology: MOS
Technical Specifications
| Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| ASA65R850E | TO220F | 700 | 850 | 10.3 | 18 |
| ASU65R850E | TO251 | 700 | 850 | 10.3 | 18 |
| ASD65R850E | TO252 | 700 | 850 | 10.3 | 18 |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.75 - 0.85 | VGS=10V, ID=2.5A, Tj=25C | |
| Gate resistance | RG | - 33.7 | - | f=1MHz, open drain |
| Input capacitance | Ciss | - 377 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 33 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 4.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 8.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Rise time | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Turn-off delay time | td(off) | - 45.2 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Fall time | tf | - 24.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Gate to source charge | Qgs | - 1.845 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 2.723 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate charge total | Qg | - 10.3 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 6.4 | V | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.78 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 124 | ns | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 0.88 | uC | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 10 | A | VR=400V, IF=2.5 A, diF/dt=100A/s |
2410121550_ANHI-ASA65R850E_C5440004.pdf
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