Low RDS ON N Channel MOSFET ANHI ASB65R300E for Power Supplies Including Server and UPS Systems
Key Attributes
Model Number:
ASB65R300E
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
15A
RDS(on):
300mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.11pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.02nF@50V
Pd - Power Dissipation:
118W
Gate Charge(Qg):
22.94nC
Mfr. Part #:
ASB65R300E
Package:
TO-263
Product Description
Product Overview
The ASA65R300E, ASD65R300E, and ASB65R300E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices offer a low drain-source on-resistance (RDS(ON) = 0.278 typ.) and are easy to control. They are suitable for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, HB, AHB, and LLC. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, server power supplies, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Package | Marking | VDS @ Tj,max | RDS(on),max | Qg,typ | ID,pulse | Continuous Drain Current (ID) | Pulsed Drain Current (ID,pulse) | Avalanche Energy (EAS) | MOSFET dv/dt ruggedness | Gate Source Voltage (static) | Gate Source Voltage (dynamic) | Power Dissipation (TO220F) | Power Dissipation (TO252/263) | Storage Temperature (Tstg) | Operating Junction Temperature (Tj) | Soldering Temperature (TL) | Reverse diode dv/dt | Thermal Resistance, Junction-Case (RthJC) (TO220F) | Thermal Resistance, Junction-Ambient (RthJA) (TO220F) | Thermal Resistance, Junction-Case (RthJC) (TO252/263) | Thermal Resistance, Junction-Ambient (RthJA) (TO252/263) | Drain-Source Breakdown Voltage (V(BR)DSS) | Gate Threshold Voltage (V(GS)th) | Zero Gate Voltage Drain Current (IDSS) | Gate-Source Leakage Current (IGSS) | Drain-Source On-State Resistance (RDS(on)) | Gate Resistance (Intrinsic) (RG) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(on)) | Rise Time (tr) | Turn-off Delay Time (td(off)) | Fall Time (tf) | Gate to Source Charge (Qgs) | Gate to Drain Charge (Qgd) | Gate Charge Total (Qg) | Gate Plateau Voltage (Vplateau) | Diode Forward Voltage (VSD) | Reverse Recovery Time (trr) | Reverse Recovery Charge (Qrr) | Peak Reverse Recovery Current (Irrm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ASA65R300E | TO220F | ASA65R300E | 700 V | 300 m | 22.94 nC | 45 A | 15 A (TC=25C, D=0.50) | 45 A (TC=25C) | 500 mJ (Tc=25,VDD=50V,L=10mH, RG=25) | 124 V/ns (VDS=0...400V) | -20 to 20 V | -30 to 30 V | 32 W (TC=25C) | - | -55 to 150 C | -55 to 150 C | 260 C | 15 V/ns (VDS=0...400V, ISD<=IS, Tj=25C) | 3.9 C/W | 80 C/W | - | - | 655 V (VGS=0V, ID=250uA) | 2.8 to 4.2 V (VDS=VGS, ID=250uA) | 1 uA (VDS=650V, VGS=0V, Tj=25C) | 100 nA (VGS=20V, VDS=0V) | 0.278 to 0.30 (VGS=10V, ID=7.5A, Tj=25C) | 5.7 (f=1MHz, open drain) | 1020 pF (VGS=0V, VDS=50V, f=10kHz) | 108 pF (VGS=0V, VDS=50V, f=10kHz) | 5.11 pF (VGS=0V, VDS=50V, f=10kHz) | 8.4 ns (VDD=400V, ID=3.8A,RG=10) | 21.2 ns (VDD=400V, ID=3.8A,RG=10) | 32.4 ns (VDD=400V, ID=3.8A,RG=10) | 20.8 ns (VDD=400V, ID=3.8A,RG=10) | 5.7 nC (VDD=400V, ID=3.8A, VGS=10V) | 13.6 nC (VDD=400V, ID=3.8A, VGS=10V) | 22.94 nC (VDD=400V, ID=3.8A, VGS=10V) | 5.4 V (VDD=400V, ID=3.8A, VGS=10V) | 0.74 V (VGS=0V, IF=1 A, Tj=25C) | 216 ns (VR=400V, IF=2A, diF/dt=100A/s) | 1.3 uC (VR=400V, IF=2A, diF/dt=100A/s) | 16.7 A (VR=400V, IF=2A, diF/dt=100A/s) |
| ASD65R300E | TO252 | ASD65R300E | 700 V | 300 m | 22.94 nC | 45 A | 15 A (TC=25C, D=0.50) | 45 A (TC=25C) | 500 mJ (Tc=25,VDD=50V,L=10mH, RG=25) | 124 V/ns (VDS=0...400V) | -20 to 20 V | -30 to 30 V | - | 118 W (TC=25C) | -55 to 150 C | -55 to 150 C | 260 C | 15 V/ns (VDS=0...400V, ISD<=IS, Tj=25C) | - | - | 1.06 C/W | 62 C/W | 655 V (VGS=0V, ID=250uA) | 2.8 to 4.2 V (VDS=VGS, ID=250uA) | 1 uA (VDS=650V, VGS=0V, Tj=25C) | 100 nA (VGS=20V, VDS=0V) | 0.278 to 0.30 (VGS=10V, ID=7.5A, Tj=25C) | 5.7 (f=1MHz, open drain) | 1020 pF (VGS=0V, VDS=50V, f=10kHz) | 108 pF (VGS=0V, VDS=50V, f=10kHz) | 5.11 pF (VGS=0V, VDS=50V, f=10kHz) | 8.4 ns (VDD=400V, ID=3.8A,RG=10) | 21.2 ns (VDD=400V, ID=3.8A,RG=10) | 32.4 ns (VDD=400V, ID=3.8A,RG=10) | 20.8 ns (VDD=400V, ID=3.8A,RG=10) | 5.7 nC (VDD=400V, ID=3.8A, VGS=10V) | 13.6 nC (VDD=400V, ID=3.8A, VGS=10V) | 22.94 nC (VDD=400V, ID=3.8A, VGS=10V) | 5.4 V (VDD=400V, ID=3.8A, VGS=10V) | 0.74 V (VGS=0V, IF=1 A, Tj=25C) | 216 ns (VR=400V, IF=2A, diF/dt=100A/s) | 1.3 uC (VR=400V, IF=2A, diF/dt=100A/s) | 16.7 A (VR=400V, IF=2A, diF/dt=100A/s) |
| ASB65R300E | TO263 | ASB65R300E | 700 V | 300 m | 22.94 nC | 45 A | 15 A (TC=25C, D=0.50) | 45 A (TC=25C) | 500 mJ (Tc=25,VDD=50V,L=10mH, RG=25) | 124 V/ns (VDS=0...400V) | -20 to 20 V | -30 to 30 V | - | 118 W (TC=25C) | -55 to 150 C | -55 to 150 C | 260 C | 15 V/ns (VDS=0...400V, ISD<=IS, Tj=25C) | - | - | 1.06 C/W | 62 C/W | 655 V (VGS=0V, ID=250uA) | 2.8 to 4.2 V (VDS=VGS, ID=250uA) | 1 uA (VDS=650V, VGS=0V, Tj=25C) | 100 nA (VGS=20V, VDS=0V) | 0.278 to 0.30 (VGS=10V, ID=7.5A, Tj=25C) | 5.7 (f=1MHz, open drain) | 1020 pF (VGS=0V, VDS=50V, f=10kHz) | 108 pF (VGS=0V, VDS=50V, f=10kHz) | 5.11 pF (VGS=0V, VDS=50V, f=10kHz) | 8.4 ns (VDD=400V, ID=3.8A,RG=10) | 21.2 ns (VDD=400V, ID=3.8A,RG=10) | 32.4 ns (VDD=400V, ID=3.8A,RG=10) | 20.8 ns (VDD=400V, ID=3.8A,RG=10) | 5.7 nC (VDD=400V, ID=3.8A, VGS=10V) | 13.6 nC (VDD=400V, ID=3.8A, VGS=10V) | 22.94 nC (VDD=400V, ID=3.8A, VGS=10V) | 5.4 V (VDD=400V, ID=3.8A, VGS=10V) | 0.74 V (VGS=0V, IF=1 A, Tj=25C) | 216 ns (VR=400V, IF=2A, diF/dt=100A/s) | 1.3 uC (VR=400V, IF=2A, diF/dt=100A/s) | 16.7 A (VR=400V, IF=2A, diF/dt=100A/s) |
2410121456_ANHI-ASB65R300E_C5440008.pdf
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