High Speed Power Switching Device AUP049N10 N Channel Silicon MOSFET with Robust Avalanche Ruggedness
Key Attributes
Model Number:
AUP049N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
136A
RDS(on):
4.9mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15.3pF
Number:
1 N-channel
Output Capacitance(Coss):
379pF
Pd - Power Dissipation:
161W
Input Capacitance(Ciss):
3.864nF
Gate Charge(Qg):
63.7nC@10V
Mfr. Part #:
AUP049N10
Package:
TO-220
Product Description
Product Overview
The AUP049N10 and AUB049N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly well-suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include low drain-source on-resistance, enhanced body diode dv/dt capability, and robust avalanche ruggedness, ensuring reliable performance in demanding environments.
Product Attributes
- Brand: Not explicitly mentioned, but inferred from part numbers.
- Material: Silicon N-Channel MOS
- Available Packages: TO220, TO263
Technical Specifications
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| AUP049N10 | TO220 | AUP049N10 | 100 | 4.9 | 60.7 | 408 |
| AUB049N10 | TO263 | AUB049N10 | 100 | 4.9 | 60.7 | 408 |
| Parameter | Symbol | Value (Typ.) | Unit | Condition |
|---|---|---|---|---|
| Drain-source on-resistance (TO220) | RDS(on) | 4.3 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-resistance (TO263) | RDS(on) | 4.2 | m | VGS=10V, ID=20A, Tj=25C |
| Continuous drain current (TC=25C) | ID | 136 | A | Limited by Tj,max |
| Continuous drain current (TC=100C) | ID | 101 | A | Limited by Tj,max |
| Pulsed drain current | ID,pulse | 408 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 282 | mJ | Tc=25, VDD=50V, Id=33.6A, L=0.5Mh, RG=25 |
| Avalanche current, single pulse | IAR | 33.6 | A | Tc=25, VDD=50V, L=0.5Mh, RG=25 |
| Gate source voltage (static) | VGS | -20 | V | static |
| Power dissipation (TO263,TO220) | Ptot | 161 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | |
| Operating junction temperature | Tj | -55 to 150 | C | |
| Thermal resistance, junction - case | RthJC | 0.78 | C/W | |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250Ua |
| Gate threshold voltage | V(GS)th | 2.5 to 4.5 | V | VDS=VGS, ID=250Ua |
| Zero gate voltage drain current | IDSS | 1 | Ua | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | Na | VGS=20V, VDS=0V |
| Input capacitance | Ciss | 3864 | Pf | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | 379 | Pf | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | 15.3 | Pf | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | 30.5 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Rise time | tr | 57 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Turn-off delay time | td(off) | 72 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Fall time | tf | 45 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Gate to source charge | Qgs | 16.2 | Nc | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 18.5 | Nc | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | 63.7 | Nc | VDD=50V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 47 | ns | VR=30V, IF=20A, diF/dt=300A/s |
| Reverse recovery charge | Qrr | 221 | Nc | VR=30V, IF=20A, diF/dt=300A/s |
| Peak reverse recovery current | Irrm | 8.8 | A | VR=30V, IF=20A, diF/dt=300A/s |
2410121521_ANHI-AUP049N10_C19192884.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
