1200V N Channel Silicon Carbide Power MOSFET ANHI ADW120N080G2 Featuring Low RDS ON and Switching Performance
Key Attributes
Model Number:
ADW120N080G2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4pF@1000V
Number:
1 N-channel
Pd - Power Dissipation:
188W
Input Capacitance(Ciss):
1.377nF@1000V
Gate Charge(Qg):
58nC@20V
Mfr. Part #:
ADW120N080G2
Package:
TO-247-3L
Product Description
1200V N-Channel Silicon Carbide Power MOSFETs
Product Overview
This series of 1200V N-Channel Silicon Carbide (SiC) Power MOSFETs offers high performance for demanding power electronics applications. Key features include a low drain-source on-resistance (RDS(ON) = 80m typ.) and easy gate control, operating in enhancement mode with a threshold voltage (Vth) between 2 to 4 V. These devices are suitable for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters.
Product Attributes
- Brand: Not specified
- Material: Silicon Carbide
- Type: N-Channel Power MOSFET
- Technology: Enhancement Mode
Technical Specifications
| Part Name | Package Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| ADQ120N080G2 | ADQ120N080G2 | 1200 | 100 | 58 | 94 |
| ADW120N080G2 | ADW120N080G2 | 1200 | 100 | 58 | 94 |
| ADG120N080G2 | ADG120N080G2 | 1200 | 100 | 58 | 94 |
Maximum Ratings
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 35 | A | TC=25C, Limited by Tj,max |
| Continuous drain current | ID | - | - | 26 | A | TC=100C, Limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 200 | mJ | Tc=25,VDD=50V,L=1mH, RG=25 |
| Gate source voltage (static) | VGS | -5 | - | 20 | V | static |
| Power dissipation | Ptot | - | - | 188 | W | TC=25C |
| Derating factor above 25C | - | - | - | 1.9 | W/C | - |
| Storage temperature | Tstg | -55 | - | 175 | C | - |
| Operating junction temperature | Tj | -55 | - | 175 | C | - |
| Soldering Temperature | TL | - | - | 300 | C | Distance of 1.6mm from case for 10s |
Thermal Characteristics
TO247 Package
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | 0.65 | 0.8 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 40 | C/W | device on PCB, minimal footprint |
TO263-7L Package
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - | - | 1.0 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
Electrical Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 1200 | - | - | V | VGS=0V, ID=1mA |
| Gate threshold voltage | V(GS)th | 2.0 | 2.8 | 4.0 | V | VDS=VGS, ID=10mA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=1200V, VGS=0V |
| Gate-source leakage current | IGSS+ | - | - | 100 | nA | VGS=20V, VDS=0V |
| Gate-source leakage current | IGSS- | - | - | -100 | nA | VGS=-5V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 80 | 100 | m | VGS=20V, ID=20A, Tj=25C |
| Drain-source on-state resistance | RDS(on) | - | 93.1 | - | m | VGS=20V, ID=20A, Tj=150C |
| Gate resistance (Intrinsic) | RG | - | 4.5 | - | f=1MHz, open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | - | 1377 | - | pF | VGS=0V, VDS=1000V, f=200KHz |
| Output capacitance | Coss | - | 62 | - | pF | VGS=0V, VDS=1000V, f=200KHz |
| Reverse transfer capacitance | Crss | - | 4 | - | pF | VGS=0V, VDS=1000V, f=200KHz |
| Turn-on delay time | td(on) | - | 10 | - | ns | VDD=800V, VGS=20V, ID=20A,RG=0; TJ =25 |
| Rise time | tr | - | 6 | - | ns | - |
| Turn-off delay time | td(off) | - | 16 | - | ns | - |
| Fall time | tf | - | 10 | - | ns | - |
| Turn-on Switching Energy | Eon | - | 748.8 | - | uJ | - |
| Turn-off Switching Energy | Eoff | - | 31.2 | - | uJ | - |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Gate to source charge | Qgs | - | 18 | - | nC | VDD=800V, ID=20A, VGS=20V |
| Gate to drain charge | Qgd | - | 17 | - | nC | VDD=800V, ID=20A, VGS=20V |
| Gate charge total | Qg | - | 58 | - | nC | VDD=800V, ID=20A, VGS=20V |
Reverse Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous Source Current | ISD | - | - | 35 | A | - |
| Diode forward voltage | VSD | - | 3.8 | - | V | IS = 10A, VGS = 0V, Tj=25C |
| Reverse recovery time | trr | - | 57 | - | ns | VDD =800VID =20A, +VGS =+15V,-VGS =-4V LLoad=500uHRg=0TJ =25 |
| Reverse recovery charge | Qrr | - | 195 | - | nC | - |
| Peak reverse recovery current | Irrm | - | 6.84 | - | A | - |
2411220257_ANHI-ADW120N080G2_C5440046.pdf
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